Semiconductor UV photonics: feature introduction

Xiaohang Li; Russell D. Dupuis; Tim Wernicke

doi:10.1364/PRJ.7.0SUVP1

Photonics Research, Volume. 7, Issue 12, SUVP1(2019)

Semiconductor UV photonics: feature introduction

Xiaohang Li^1、*, Russell D. Dupuis², and Tim Wernicke³

¹King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi Arabia

²School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

³Technische Universität Berlin, Institute of Solid State Physics, Berlin D-10623, Germany

show less

References(15)

[1] H. Amano, M. Kito, K. Hiramatsu, I. Akasaki. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI). Japanese J. Appl. Phys., 28, L2112-L2114(1989).

[2] F. Jiang, J. Zhang, L. Xu, J. Ding, G. Wang, X. Wu, X. Wang, C. Mo, Z. Quan, X. Guo, C. Zheng, S. Pan, J. Liu. Efficient InGaN-based yellow-light-emitting diodes. Photon. Res., 7, 144-148(2019).

[3] M. Kneissl, T.-Y. Seong, J. Han, H. Amano. The emergence and prospects of deep-ultraviolet light-emitting diode technologies. Nat. Photonics, 13, 233-244(2019).

[4] Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, C. Sasaoka, H. Amano. A 271.8 nm deep-ultraviolet laser diode for room temperature operation. Appl. Phys. Express, 12, 124003(2019).

[5] C. Kuhn, L. Sulmoni, M. Guttmann, J. Glaab, N. Susilo, T. Wernicke, M. Weyers, M. Kneissl. MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs. Photon. Res., 7, B7-B11(2019).

[6] C. Trager-Cowan, A. Alasmari, W. Avis, J. Bruckbauer, P. R. Edwards, B. Hourahine, S. Kraeusel, G. Kusch, R. Johnston, G. Naresh-Kumar, R. W. Martin, M. Nouf-Allehiani, E. Pascal, L. Spasevski, D. Thomson, S. Vespucci, P. J. Parbrook, M. D. Smith, J. Enslin, F. Mehnke, M. Kneissl, C. Kuhn, T. Wernicke, S. Hagedorn, A. Knauer, V. Kueller, S. Walde, M. Weyers, P.-M. Coulon, P. A. Shields, Y. Zhang, L. Jiu, Y. Gong, R. M. Smith, T. Wang, A. Winkelmann. Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films. Photon. Res., 7, B73-B82(2019).

[7] W. Xu, Y. Shi, F. Ren, D. Zhou, L. Su, Q. Liu, L. Cheng, J. Ye, D. Chen, R. Zhang, Y. Zheng, H. Lu. Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection. Photon. Res., 7, B48-B54(2019).

[8] J. Wang, M. Feng, R. Zhou, Q. Sun, J. Liu, Y. Huang, Y. Zhou, H. Gao, X. Zheng, M. Ikeda, H. Yang. GaN-based ultraviolet microdisk laser diode grown on Si. Photon. Res., 7, B32-B35(2019).

[9] Y. Nagasawa, A. Hirano. Review of encapsulation materials for AlGaN-based deep-ultraviolet light-emitting diodes. Photon. Res., 7, B55-B65(2019).

[10] X. He, E. Xie, M. S. Islim, A. A. Purwita, J. J. D. McKendry, E. Gu, H. Haas, M. D. Dawson. 1 Gbps free-space deep-ultraviolet communications based on III-nitride micro-LEDs emitting at 262 nm. Photon. Res., 7, B41-B47(2019).

[11] Z.-H. Zhang, J. Kou, S.-W. H. Chen, H. Shao, J. Che, C. Chu, K. Tian, Y. Zhang, W. Bi, H.-C. Kuo. Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes. Photon. Res., 7, B1-B6(2019).

[12] X. Liu, K. Mashooq, D. A. Laleyan, E. T. Reid, Z. Mi. AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics. Photon. Res., 7, B12-B23(2019).

[13] A. M. Armstrong, B. A. Klein, A. A. Allerman, A. G. Baca, M. H. Crawford, J. Podkaminer, C. R. Perez, M. P. Siegal, E. A. Douglas, V. M. Abate, F. Leonard. Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate. Photon. Res., 7, B24-B31(2019).

[14] L. Zhang, Y. Guo, J. Yan, Q. Wu, Y. Lu, Z. Wu, W. Gu, X. Wei, J. Wang, J. Li. Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array. Photon. Res., 7, B66-B72(2019).

[15] J. Ruschel, J. Glaab, B. Beidoun, N. L. Ploch, J. Rass, T. Kolbe, A. Knauer, M. Weyers, S. Einfeldt, M. Kneissl. Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes. Photon. Res., 7, B36-B40(2019).

Tools

Get Citation

Copy Citation Text

Xiaohang Li, Russell D. Dupuis, Tim Wernicke. Semiconductor UV photonics: feature introduction[J]. Photonics Research, 2019, 7(12): SUVP1

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Special Issue: SEMICONDUCTOR UV PHOTONICS

Received: Nov. 18, 2019

Accepted: --

Published Online: Nov. 28, 2019

The Author Email: Xiaohang Li (xiaohang.li@kaust.edu.sa)

DOI:10.1364/PRJ.7.0SUVP1

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology