This study focuses on the properties of Vanadium and Copper co-doped Barium Zirconate Titanate (BZT) for potential technological applications. Various doping ratios of CuO:V₂O₅ were used to synthesize the materials, and X-ray diffraction (XRD) confirmed a tetragonal phase in all samples. The grain density and dimensions decreased with higher concentrations of V₂O₅ and CuO. FTIR spectra confirmed the compositional structure and bonding of the samples. The impedance analysis indicated that higher doping concentrations facilitated charge conduction at grain boundaries. Dielectric relaxation was studied using the Havriliak–Negami model and electrical modulus behavior was analyzed. Activation energy values from Arrhenius fitting matched those from impedance data, suggesting the same type of charge carriers. The study revealed that elevated levels of V concentration induced charge carriers to exhibit hopping behavior, thereby enhancing conductivity. Conversely, higher Cu concentration impeded hopping, leading to a swift rise in activation energy.