Chinese Optics Letters, Volume. 14, Issue 4, 043101(2016)
Molybdenum thin films fabricated by rf and dc sputtering for Cu(In,Ga)Se2 solar cell applications
Fig. 1. XRD patterns of as-deposited Mo films prepared by dc and rf magnetron sputtering, respectively, as a function of the supplied power.
Fig. 2. SEM images of the Mo films prepared by dc and rf magnetron sputtering, respectively, with different supplied powers: (a) rf 80 W, (b) rf 100 W, (c) rf 120 W, (d) dc 80 W, (e) dc 100 W, and (f) dc 120 W.
Fig. 3. AFM images of the Mo films prepared by dc and rf magnetron sputtering, respectively, with different supplied powers, revealing the differences in grain size and morphology: (a) rf 80 W, (b) rf 100 W, (c) rf 120 W, (d) dc 80 W, (e) dc 100 W, and (f) dc 120 W.
Fig. 4. Cross-sectional SEM images of the Mo films deposited at 100 and 120 W by rf and dc sputtering, respectively: (a) rf 100 W, (b) dc 100 W, (c) rf 120 W, (d) dc 120 W. (e) Bright-field TEM micrograph from the dc-120 W Mo film.
Fig. 5. (a) SEM cross-sectional image of the glass/Mo/CIGS sample after selenization, (b)
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Beibei Guo, Yaoming Wang, Xiaolong Zhu, Mingsheng Qin, Dongyun Wan, Fuqiang Huang. Molybdenum thin films fabricated by rf and dc sputtering for Cu(In,Ga)Se2 solar cell applications[J]. Chinese Optics Letters, 2016, 14(4): 043101
Category: Thin films
Received: Oct. 31, 2015
Accepted: Feb. 4, 2016
Published Online: Aug. 6, 2018
The Author Email: Dongyun Wan (echowandy@shu.edu.cn)