Fig. 1. TEM image of Ta₂O₅-TiO₂/SiO₂ coating fabricated by ion beam sputtering

Fig. 2. Schematic diagram of interfacial scattering of multilayer

Fig. 3. Surface roughness of low-loss thin film samples from REO Corporation， USA

Fig. 4. Comparison of ARS and TS of QWHR films with fully correlated interface and totally uncorrelated interface

Fig. 5. Extracted 1D interface profiles obtained from high resolution TEM image of Mo/Si multilayer by oblique deposition

Fig. 6. ARS measurement and simulation result at 13.5 nm of Mo/Si multilayer deposited with normal and oblique incidence （α=-30°）

Fig. 7. Schematic of multilayer mirror fabricated with oblique deposition

Fig. 8. ARS in incident plane for SiO₂/Ta₂O₅ mirrors calculated for G1 （curve 1） and G2 （curve 2） scattering geometries and ARS for the similar mirrors fabricated using deposition at normal incidence

Fig. 9. Sketch of the bi-layer fabricated by oblique deposition of materials（d_1，2is the geometrical layer thickness， ε_1，2 is the permittivity of bi-layer materials）

Fig. 10. ARS in incident plane from SiO₂-on-Ta₂O₅ bi-layers designed to suppress scattering at different scattering angles from 0 to 60°

Fig. 11. The bi-layers are fabricated at different deposition angles（The solid curves are results of ARS measurements and the dashed curves are results of ARS calculation）

Fig. 12. Variation of interfacial electric field before and after adjusting film design

Fig. 13. F_j at interfaces of QWHR coatings for different scattering angles

Fig. 14. F_j at interfaces of LSHR coatings for different scattering angles

Fig. 15. Surface topography and PSD of QWHR， LSHR coatings measured by AFM

Fig. 16. 3D-ARS simulations of QWHR， LSHR coatings

Fig. 17. ARS measurement of QWHR and LSHR coatings of different polarization in plane of incidence

Fig. 18. Schematic diagram of nodule defects

Fig. 19. Geometric model of typical nodule defect

Fig. 20. （a） Randomly distributed positions of nodules； （b） Schematic of far field superposition； （c） 3D elementary contours of electric field determined by amplitude superposition； （d） Intensity superposition

Fig. 21. Simulated and measured ARS of HR coatings with and without artificial nodules at wavelength of 1 064 nm

Fig. 22. Variation of total scattering with nodule size

Fig. 23. Electric field distribution in nodule structures with different seed sizes

Fig. 24. SEM and ARS of HR coatings with seeds and planarized seeds

Fig. 25. Schematic diagram of secondary system structure

Fig. 26. Theoretical curves of mechanical loss of different elements doping with temperature change

Fig. 27. Comparison of mechanical loss of undoped and Ti-doped Ta₂O₅ thin films at vibration frequency of 1 000 Hz

Fig. 28. Atomic structure modeling of 20.4%Ti-doped Ta₂O₅ films

Fig. 29. Mechanical loss of Si∶H monolayers before and after annealing

Fig. 30. Actual view of GeNS support part in vacuum chamber

Fig. 31. Mechanical loss of SiO₂ monolayer， Ta₂O₅ monolayer and high-reflection films composed of SiO₂ and Ta₂O₅ stacks after annealing