Acta Optica Sinica, Volume. 19, Issue 10, 1430(1999)
ZnS:Sm, Cl Red Thin Film Electroluminescent Devices with Ceramic Thick Film as Insulator Layer
Red ZnS:Sm, Cl thin film electroluminescent devices with ceramic thick film as insulator layer have been manufactured. The transparent electrode is ZnO doped with Al made by sputtering and the emitting layer is ZnS:Sm, Cl made by electric evaporation method. The electroluminescent spectrum of ceramic subsrrate thin film electroluminescent (CSTFEL) device has been measured. The dependence of brightness on voltage was measured and the dependence of efficiency on voltage was calculated. The CSTFEL device was driven under 50 Hz and the maximum luminance is 18.4 cd/m2 and the maximum efficiency is 0.06 lm/W.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. ZnS:Sm, Cl Red Thin Film Electroluminescent Devices with Ceramic Thick Film as Insulator Layer[J]. Acta Optica Sinica, 1999, 19(10): 1430