High Power Laser and Particle Beams, Volume. 33, Issue 4, 045002(2021)

Research on shutdown characteristics of thyristor reverse parallel diodes

Tao Li1... Xingru Zhang2,*, Mengbing He2, Jun Liu2 and Bingyang Feng2 |Show fewer author(s)
Author Affiliations
  • 1Institute of Applied Electronics, CAEP, Mianyang 621900, China
  • 2State Key Laboratory of Advanced Electromagnetic Engineering and New Technology, Huazhong University of Science and Technology, Wuhan 430074, China
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    References(4)

    [6] Shammas N Y A, Rahimo M T, Hoban P T. Effects of external operating conditions on the reverse recovery behaviour of fast power diodes[J]. EPE Journal, 8, 11-18(1999).

    [8] Matteson F M, Ruhl H J, Shafer P O, et al. The recovered charge characteristics of high power thyristors[J]. IEEE Transactions on Industry Applications, IA-12, 305-311(1976).

    [11] Lee C W, Park S B. Design of a thyristor snubber circuit by considering the reverse recovery process[J]. IEEE Transactions on Power Electronics, 3, 440-446(1988).

    [14] Chokhawala R S, Carroll E I. A snubber design tool for P-N junction reverse recovery using a more accurate simulation of the reverse recovery waveform[J]. IEEE Transactions on Industry Applications, 27, 74-84(1991).

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    Tao Li, Xingru Zhang, Mengbing He, Jun Liu, Bingyang Feng. Research on shutdown characteristics of thyristor reverse parallel diodes[J]. High Power Laser and Particle Beams, 2021, 33(4): 045002

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    Paper Information

    Category: Pulsed Power Technology

    Received: Aug. 15, 2020

    Accepted: --

    Published Online: Jun. 24, 2021

    The Author Email: Zhang Xingru (zhangxingru@hust.edu.cn)

    DOI:10.11884/HPLPB202133.200239

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