Journal of Semiconductors, Volume. 44, Issue 9, 091603(2023)
Impedance spectroscopy for quantum dot light-emitting diodes
Fig. 1. (Color online) (a) J−V characteristic, (b) C−V characteristic, which reflects (c) the charge dynamics in QLED, (d) Nyquist plot at the selected working voltage, (e) an equivalent circuit model can be built up according to the Nyquist plot, (f) C−f characteristic at the selected working voltage, (g) the trap distribution can be calculated if the capacitance rise is induced by carrier trapping.
Fig. 2. (Color online) Nyquist plot and its equivalent circuit model of a blue QLED.
Fig. 4. (Color online) (a) Equivalent circuit model of QLED based on CPE circuit element, (b) Nyquist plot of QLED with two semicircles and its equivalent circuit model. Modified with permission from (a) Ref. [54] Copyright 2020 American Chemical Society, (b) Ref. [55] Copyright 2022 Springer Nature.
Fig. 6. (Color online) Capacitance−frequency characteristic of the QLED. Modified with permission from Ref. [60] Copyright 2019 AIP Publishing.
Fig. 7. Energy level of a p−i−n heterojunction. Modified with permission from Ref. [37] Copyright 1992 AIP Publishing.
Fig. 8. (Color online) Capacitance−frequency characteristics of OPV with two-step capacitance rise. Modified with permission from Ref. [64] Copyright 2016 American Physical Society.
Fig. 9. (Color online) Capacitance−voltage characteristic of a blue QLED.
Fig. 13. (Color online) Capacitance−voltage and dC/dV−V characteristics of a red QLED. Modified with permission from Ref. [86] Copyright 2022 IOP Publishing.
Fig. 14. (Color online) 1/C2−V characteristics of the HOD (a) and EOD (b). Modified with permission from Ref. [6] Copyright 2020 Springer Nature.
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Xiangwei Qu, Xiaowei Sun. Impedance spectroscopy for quantum dot light-emitting diodes[J]. Journal of Semiconductors, 2023, 44(9): 091603
Category: Articles
Received: May. 21, 2023
Accepted: --
Published Online: Oct. 25, 2023
The Author Email: Sun Xiaowei (sunxw@sustech.edu.cn)