Chinese Journal of Lasers, Volume. 37, Issue 5, 1186(2010)
A New Package Structure for High Power Single Emitter Semiconductor Laser and Performance Analysis
[1] [1] Paul Crump,Jun Wang,Steve Patterson et al.. Diode laser efficiency increases enable >400-W peak power from 1-cm bars and shows clear path to peak powers in excess of 1-kW[C]. SPIE,2006,6104:77-86
[2] [2] Wei Gao,Zuntu Xu,Lisen Cheng et al.. High power reliable single emitter laser diode at 808 nm[C]. SPIE,2007,6456:64560B
[3] [3] Gotz Erbert,Arthur Barwalff,Jurgen Sebastian et al.. High-power diode laser[J]. Topics Appl. Phys.,2000,78:173-223
[4] [4] A. Knauer,G. Erbert,R. stasks et al.. High-power 808 nm lasers with a super-large optical cavity[J]. Semicond. Sci. Technol.,2005,20:621-624
[5] [5] Liu Xingsheng. A novel single emitter high power semiconductor laser and method of preparation[P]. Chinese Patent,CN 101465516A:2009.6
[6] [6] Xingsheng Liu,R. W. Davis,L. C. Hughes et al.. A study on the reliability of indium solder die bonding of high power semiconductor lasers[J]. J. Appl. Phys.,2006,100:013104-1
[7] [7] Zhang Yongming,Zhong Jingchang,Luo Guoguang et al.. Study of thermal characteristics of 808 nm InGaAsP-InP SQW lasers[J]. Acta Photonica Sinica,2006,35(1):9-12
[9] [9] Maciej Bugajski,Tomasz Piwonski,Dorota Wawer et al.. Thermoreflectance study of facet hreating in semiconductor lasers[C].Materials Science in Semiconductor Processing,2006,9(1-3):188-197
[10] [10] S. S. Howard,Zhijun Liu,C. F.Gmachl. Analysis of the thermal roll-over of quantum cascade lasers[C].CLEO,Maryland,2007:CTuO2
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Zhang Yanxin, Wang Jingwei, Wu Di, Yang Kai, Ma Youlong, Liu Xingsheng. A New Package Structure for High Power Single Emitter Semiconductor Laser and Performance Analysis[J]. Chinese Journal of Lasers, 2010, 37(5): 1186
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Received: Aug. 28, 2009
Accepted: --
Published Online: May. 11, 2010
The Author Email: Yanxin Zhang (zhangyanxin@opt.ac.cn)