Chinese Journal of Lasers, Volume. 37, Issue 5, 1186(2010)
A New Package Structure for High Power Single Emitter Semiconductor Laser and Performance Analysis
A new high power single emitter laser (F-mount) is reported. This package structure is different from the commercial products structure with C-mount,and it has an advantage of higher thermal conduction. The maximum output optical power of 13.3 W through this package structure is obtained under the testing condition of continuous waves (CW) at 20 ℃ and the laser can still work well. There was no catastrophic mirror-damage (COMD) occurred on it. The maximum output optical power of 30.8 W is obtained under the testing condition of quasi-continuous wave (QCW). Moreover,the following parameters are calculated with coefficient of wavelength-shift versus temperature of 0.278 nm/℃,thermal resistance of 3.18 K/W,the characteristic temperature of 135 K at the threshold current at room temperature,the characteristic temperature of 743 K for the differential efficiency at room temperature. It has lower thermal resistance and better heat sink capability and higher output power than commercial single emitter laser packaged with C-mount structure.
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Zhang Yanxin, Wang Jingwei, Wu Di, Yang Kai, Ma Youlong, Liu Xingsheng. A New Package Structure for High Power Single Emitter Semiconductor Laser and Performance Analysis[J]. Chinese Journal of Lasers, 2010, 37(5): 1186
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Received: Aug. 28, 2009
Accepted: --
Published Online: May. 11, 2010
The Author Email: Yanxin Zhang (zhangyanxin@opt.ac.cn)