Acta Physica Sinica, Volume. 68, Issue 22, 228501-1(2019)

Effects of material structure on device efficiency of III-nitride intersubband photodetectors

Jian-Bin Kang1,2、*, Qian Li1,2, and Mo Li1,2
Author Affiliations
  • 1Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China
  • 2Insititute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China
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    References(24)

    [12] Kang J B, Li M, Li Q, Wang W P, Chen F L, Zhang J[J]. International Conference on Numerical Simulation of Optoelectronic Devices, 215(2017).

    [16] Kang J B, Li Q, Li M, Wang W P, Chen F L, Zhang J[J]. International Conference on Numerical Simulation of Optoelectronic Devices, 111(2018).

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    Jian-Bin Kang, Qian Li, Mo Li. Effects of material structure on device efficiency of III-nitride intersubband photodetectors[J]. Acta Physica Sinica, 2019, 68(22): 228501-1

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    Paper Information

    Received: May. 12, 2019

    Accepted: --

    Published Online: Sep. 17, 2020

    The Author Email:

    DOI:10.7498/aps.68.20190722

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