[1] [1] J. R. Meyer, C. A. Hoffman, F. J. Bartoli et al.. Advanced magneto-transport characterization of LPE-grown Hg1-xCdxTe by quantitative mobility spectrum analysis［J］. J. Electron. Mater., 1996, 25(8): 1157～1164

[2] [2] J. Antorszewski, D. J. Seymour, L. Faraone et al.. Magneto-transport characterization using quantitative maobiliy-spectrum analysis［J］. J. Electron. Mater., 1995, 24(9): 1255～1262

[3] [3] L. F.Lou, W. H. Frye. Hall effect and resistivity in liquid-phase-epitaxial layers of HgCdTe［J］. J. Appl. Phys., 1984, 56(8): 2253～2267

[4] [4] P. Moravec, R. Grill, J. France. Galvanomagnetic and theremoelectric properties of P-HgCdTe［J］. Semicond. Sci. Technol., 2001, 16(1): 7～13

[5] [5] S. Kialgamdchai, M. Myronov, O. A. Mironov. Mobility spectrum computational analysis using a maximum entropy approach［J］. Phys. Rev. E, 2002, 66(3): 1～9

[6] [6] Li Li, Lu Qisheng. Numerical simulation of dynamic response of PC-type HgCdTe detector irradiated by in-band and out-of-band laser beams［J］. Acta Optica Sinica, 2008, 28(10): 1952～1958

[7] [7] Joe Schmit, Paul Kruse, Ernie Stelzer. Development of a 0.1 eV bandgap semiconductor at the honeywell research center［C］. SPIE, 2009, 7298: 7298R-1

[8] [8] P. R. Bratt, S. M. Johnson, D. R. Rhiger. Historical perspective on HgCdTe material and device development at Raytheon vision systems［C］. SPIE, 2009, 7298: 7298U-1

[9] [9] W. A. Beck, J. R. Anderson. Determination of electrical transport properties using a novel magnetic field-dependent hall technique［J］. J. Appl. Phys., 1987, 62(2): 541～545