Journal of Inorganic Materials, Volume. 38, Issue 4, 387(2023)
Figures & Tables(10)
1. Comparison of the structure and performance between the single/double dielectric layer metal-oxide memristor
2. Advantages of the double dielectric layer metal-oxide memristor in building neural network
3. Mechanism and characteristic of the double dielectric layer metal-oxide memristor based on the localization effect of electric field[14]
4. Two mechanisms and characteristics comparison of the double dielectric layer metal-oxide memristor based on oxygen vacancy gradient
5. Mechanism and performance of the double dielectric layer metal-oxide memristor based on Joule heating effect[57]
6. Mechanism of the double dielectric layer metal-oxide memristor with the linear symmetrical pulse response[58]
7. Data set classification using memristor based on double dielectric layer metal-oxide[51]
8. Demonstration of speech recognition using double dielectric layer metal-oxide memristor[61]
9. Demonstration of image recognition using double dielectric layer metal-oxide memristor
Table 1. Performance comparison of the single/double dielectric layer metal-oxide memristors
View tableView in ArticleTable 1. Performance comparison of the single/double dielectric layer metal-oxide memristors
Memristor structure Range of Set voltage, ΔVSet/V Range of Reset voltage, ΔVReset/V Endurance On/Off ratio Retention/s Ref. Single dielectric layer Ta/ZrO2/TiN -1.0 ~-1.6 (0.6) 0.8 ~ 1.5 (0.7) 100 102 - [ 15 ]Cu/Al2O3/Pt 0.4 ~ 1.2 (0.8) -0.1 ~-0.8 (0.7) 2×103 105 105 [ 19 ]Ag/ZnO/Pt 0.3 ~ 1.0 (0.7) -0.4 ~-0.8 (0.4) 102 50 104 [ 20 ]TaN/Ta2O5/Pt 2.0 ~ 4.5 (2.5) -2.5 ~-4.5 (2) 104 - 104 [ 21 ]Ta/ZrO2/Pt 0.4 ~ 2.0 (1.6) -0.4 ~-1.0 (0.6) 100 - - [ 22 ]Double dielectric layer Ag/SiO2/Ta2O5/Pt 0.14 ~ 0.24 (0.1) -0.06 ~-0.14 (0.08) 103 103 104 [ 14 ]Ta/ZrO2/ZTO/TiN -0.8 ~-1.2 (0.4) 0.8 ~ 1.2 (0.4) 105 102 3×103 [ 15 ]Ta/Ta2O5/ZrO2/Pt 0.7 ~ 1.2 (0.5) -0.5 ~-0.8 (0.3) 106 102 104 [ 17 ]TaN/Ta2O5/WO3/Pt 1.6 ~ 2.3 (0.7) -1.9 ~-2.5 (0.6) 109 - 106 [ 21 ]Ti/HfO2/TiOx/Pt -0.8 ~-1.1 (0.3) 1.4 ~ 1.5 (0.1) 107 103 105 [ 23 ]
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Junqi YOU, Ce LI, Dongliang YANG, Linfeng SUN.
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Received: Dec. 19, 2022
Accepted: --
Published Online: Oct. 17, 2023
The Author Email: SUN Linfeng (sunlinfeng@bit.edu.cn)
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