Acta Physica Sinica, Volume. 69, Issue 11, 117301-1(2020)
Fig. 1. Preparation processes of the bulk SnSe2.
Fig. 2. (a) XRD patterns of SnSe2, the inset is the crystal structure of the SnSe2; (b) and (c) FESEM images of the fresh fracture surface of SnSe2 after SPS synthesis; (d) EDS spectrum of SnSe2; (e) the Se elemental map and (f) the Sn elemental map.
Fig. 3. Temperature dependence (10−300 K) of the resistivity (a) and carrier concentration and mobility (b).
Fig. 4. (a)
Fig. 5. (a)
Fig. 6. lg
Fig. 7.
Fig. 8. (a) Electron motion process dominated by lattice scattering; (b) influence of magnetic field on the electron motion process dominated by lattice scattering; (c) electron localization process dominated by impurity scattering; (d) influence of magnetic field on the electron localization process dominated by impurity scattering.
Fig. 9. (a)
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Bin He, Xiong He, Guo-Qiang Liu, Can Zhu, Jia-Fu Wang, Zhi-Gang Sun.
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Received: Jan. 28, 2020
Accepted: --
Published Online: Dec. 2, 2020
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