Chinese Optics Letters, Volume. 14, Issue 1, 012301(2016)
Electro-optic effects induced by the built-in electric field in a {001}-cut silicon crystal
Figures & Tables(4)
Fig. 1. Configuration of silicon sample and the measurement system for EFI PE. (a) MISIM configuration of silicon sample whose size is denoted. (b) Experimental measurement system for EFI PE.
Fig. 2. Dependence of the electro-optic signal on the AC applied voltage for silicon sample with MISIM capacitor structure. The electro-optic response is linear with the applied voltage up to 140 V. The experimental curve is obtained without the external DC bias, so the linear electro-optic signal is induced by the built-in field in the SCR of the silicon sample. The insert figure is the measured Kerr signal.
Fig. 3. Configuration of silicon sample and the measurement system for EFI OR. (a) MSM configuration of silicon sample. (b) The experimental system for measuring EFI OR. A half-wave plate is used to change the azimuth of the linearly polarized light.
Fig. 4. Measured anisotropy of EFI OR in the SCR of the (001) surface layer of silicon crystal.
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Qi Wang, Zhang Hai, Nian Liu, Baijun Zhao, Xiuhuan Liu, Lixin Hou, Yanjun Gao, Gang Jia, Zhanguo Chen. Electro-optic effects induced by the built-in electric field in a {001}-cut silicon crystal[J]. Chinese Optics Letters, 2016, 14(1): 012301
Paper Information
Category: Optical devices
Received: Jul. 6, 2015
Accepted: Nov. 6, 2015
Published Online: Aug. 6, 2018
The Author Email: Xiuhuan Liu (xhliu@jlu.edu.cn), Zhanguo Chen (czg@jlu.edu.cn)
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