AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Infrared and Laser Engineering, Volume. 36, Issue 4, 435(2007)

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References(8)

[1] [1] LEVINE B F.Quantum-well infrared photodetectors[J].J Appl Phys,1993,74 (8):R1-80.

[2] [2] LEVINE B F,ZUSSMAN A,KUO J M,et al.19 μm cutoff long wavelength GaAs/AlxGa1-xAs quantum well infrared photodetectors[J].Journal of Applied Physics,1992,71(10):5130-5135.

[3] [3] LIU H C,WASILEWSKI Z R,BUCHNAN M,et al.Segregation of Si doping in GaAs/AlGaAs quantum well and the cause of the asymmetry in the current voltage characteristics of intersubband infrared detector[J].Appl Phys Lett,1993,63 (6):761.

[4] [4] GUNAPALA S D,BANDARA S V,SINGH A,et al.640×486long-wavelength two-color GaAs/AlGaAs quantum well infrared photodetector (QWIP) focal plane array camera[J].IEEE Trans Electron Devices,2000,47:963.

[5] [5] GUNAPALA S D,BANDARA S V,LIU J K,et al.1 024×1 024 mid-wavelength and long-wavelength QWIP focal plane arrays for imaging applications[J].Semiconductor Science and Technology,2005,20:473.

[10] [10] ZUSSMAN A,LEVINE B F,KUO J M,et al.Extended longwavelength λ =11～15 μm GaAs /AlxGa1-xAs quantum well infrared photodetectors[J].J Appl Phys,1991,70(9):5101.

[11] [11] GUNAPALA S D,BANDARA S V.Quantum well infrared photodetector (QWIP) focal plane arrays[J].Semiconductors and Semimetals,1999,62:197.

[12] [12] LEVINE B F.Quantum-well infrared photodetectors[J].J Appl Phys,1993,74(8):R1.

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology[J]. Infrared and Laser Engineering, 2007, 36(4): 435

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