Semiconductor Optoelectronics, Volume. 44, Issue 4, 568(2023)

Characterization of As Ion Implantation and Activation in LPE-grown HgCdTe

LU Zhichao1...2, LIN Chun1,*, WANG Xi1, LI Xun1 and SUN Quanzhi1 |Show fewer author(s)
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  • 2[in Chinese]
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    References(8)

    [1] [1] Li X, Wang X, Zhou S, et al. Comparative study on dark current mechanisms of n-on-p and p-on-n long-wavelength HgCdTe infrared detectors[J]. Infrared Physics and Technology, 2022, 123: 104166.

    [2] [2] Rogalski A, Ciupa R. Long-wavelength HgCdTe photodiodes: n+-on-p versus p-on-n structures[J]. J. Appl. Phys., 1995, 77(7): 3505-3512.

    [3] [3] Lei W, Antoszewski J, Faraone O. Progress, challenges, and opportunities for HgCdTe infrared materials and detectors[J]. Appl. Phys. Rev., 2015, 2(4): 041303.

    [6] [6] Schaake H F. Kinetics of activation of group V impurities in Hg1-xCdxTe alloys[J]. J. Appl. Phys., 2000, 88(4): 1765-1770.

    [7] [7] Lee T S, Garland J, Grein C H. Correlation of arsenic incorporation and its electrical activation in MBE HgCdTe[J]. J. of Electronic Materials, 2000, 29(6): 869-872.

    [8] [8] Chandra D, Schaake H F, Kinch M A, et al. Activation of arsenic as an acceptor in Hg1-xCdxTe under equilibrium conditions[J]. J. of Electronic Materials, 2002, 31(7): 715-719.

    [9] [9] Van Der Pauw L J. A Method of Measuring Specific Resistivity and Hall Effect of Diks of Arbitrary Shape[M]. 1958.

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    LU Zhichao, LIN Chun, WANG Xi, LI Xun, SUN Quanzhi. Characterization of As Ion Implantation and Activation in LPE-grown HgCdTe[J]. Semiconductor Optoelectronics, 2023, 44(4): 568

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    Paper Information

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    Received: Mar. 6, 2023

    Accepted: --

    Published Online: Nov. 26, 2023

    The Author Email: Chun LIN (chun_lin@mail.sitp.ac.cn)

    DOI:10.16818/j.issn1001-5868.2023030601

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