[1] [1] L. Liu, J. H. Edgar. Substrate for gallium nitride epitaxy[J]. Mater. Sci. Engng., 2002, R37(3): 61～127

[2] [2] William A. Doolittle, Sangbeom Kang, April Brown. MBE growth of high quality GaN on LiGaO2 for high frequency, high power electronic applications[J]. Solid State Electron., 2000, 44(2): 229～238

[6] [6] Yunlin Chen, Wanlin Zhang, Yongchun Shu et al.. Determination of the Li/Nb ratio in LiNbO3 crystals prepared by vapor transport equilibration method[J]. Opt. Mater., 2003, 23(2): 295～298

[8] [8] Shengming Zhou, Jun Xu, Shuzhi Li et al.. γLiAlO2 layer on (0001) sapphire fabricated by vapor transport equilibration[J]. J. Crystal Growth, 2004, 267(3): 564～568

[9] [9] Encarnación. Víllora, Kiyoshi Shimamura, Yukio Yoshikawa et al.. Largesize βGa2O3 single crystals and wafers[J]. J. Crystal Growth, 2004, 270(3): 420～426

[11] [11] C. J. Rawn, J. Chaudhuri. High temperature Xray diffraction study of LiGaO2[J]. J. Crystal Growth, 2001, 225(2): 214～220