Acta Optica Sinica, Volume. 26, Issue 9, 1424(2006)
LiGaO2 Layers Fabricated by Vapor Transport Equilibration
To get a small lattice mismatch substrate for GaN, highly [001] oriented LiGaO2 layers were successfully fabricated on (100) βGa2O3 single crystal substrates by vapor transport equilibration (VTE). Xray diffractions indicated that the asfabricated layers by VTE were singlephase. As revealed by scanning electron microscopy (SEM), the morphologies of the layers were influenced by the VTE temperature. It was found that the grain size of the layers enlarged with the increasing of the VTE temperature. Xray diffraction results showed that the layers changed from polycrystalline to single crystalline with the increase of VTE temperature. After annealing processing, color center was introduced into LiGaO2 layers as the absorption spectrum showed, kind of the color centers is determined by the annealing temperature. It was shown that (001) LiGaO2∥(100) βGa2O3 composite substrate for GaNbased epitaxial film could be fabricated by VTE technique at the temperature lower than the melting point of LiGaO2.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. LiGaO2 Layers Fabricated by Vapor Transport Equilibration[J]. Acta Optica Sinica, 2006, 26(9): 1424