Acta Physica Sinica, Volume. 69, Issue 2, 027802-1(2020)
Fig. 1. (a) Schematic structure of micro-LED array; (b) SEM image of 10 μm micro-LED array surface.(a) micro-LED阵列结构图; (b) 10 μm micro-LED阵列表面SEM图像
Fig. 2. (a) The
Fig. 3. Comparison of (a) reverse leakage current and (b) light output density between implanted isolated micro-LED devices and mesa etching devices.注入隔离micro-LED器件与台面刻蚀器件 (a)反向漏电流和(b)光输出密度比较
Fig. 4. The relationship between damage and implantation depth of F ion with different implantation energies with SRIM simulation.SRIM模拟F离子不同注入能量下产生的损伤与注入深度关系
Fig. 6. The CTLM linear fitting curve at (a) the implantation energy of 50 keV and (b) 50/100 keV.CTLM线性拟合曲线 (a) 50 keV能量注入; (b) 50/100 keV能量注入
Fig. 7.
Fig. 8. Light-emitting aperture arrays of (a) 6 μm, (b) 8 μm, and (c)10 μm at 20 mA.20 mA下 (a) 6 μm, (b) 8 μm, (c) 10 μm发光孔径阵列发光图像
Table 1.
The photoelectric properties of 6 μm micro-LED array.
6 μm micro-LED阵列光电性能参数
View tableView in ArticleTable 1.
The photoelectric properties of 6 μm micro-LED array.
6 μm micro-LED阵列光电性能参数
样品 工作电压(20 mA)/V 反向漏电流(–5 V)/A 光输出密度(2264 A/cm–2)/W·cm–2 A 3.69 2.89 × 10–7 31.34 B 3.27 3.43 × 10–8 40.59
Table 2.
The actual emission condition of single light-emitting aperture in sample B.
样品B单颗发光孔径实际发光情况
View tableView in ArticleTable 2.
The actual emission condition of single light-emitting aperture in sample B.
样品B单颗发光孔径实际发光情况
器件尺寸/μm 6 8 10 20[ 16 ]10[ 17 ]隔离方式 注入 台面刻蚀 实际发光区域 实际发光面积S1/μm2 24.10 43.92 72.04 144 70 ± 10 器件面积 S2/μm2 28.26 50.24 78.50 400 100 S1/S2/% 85% 87% 92% 36% 70 ± 10
Get Citation
Copy Citation Text
Cheng-Hao Gao, Feng Xu, Li Zhang, De-Sheng Zhao, Xing Wei, Ling-Juan Che, Yong-Zhang Zhuang, Bao-Shun Zhang, Jing Zhang.
Category:
Received: Sep. 18, 2019
Accepted: --
Published Online: Nov. 9, 2020
The Author Email: Bao-Shun Zhang (bszhang2006@sinano.ac.cn), Jing Zhang (zhangjingcust@cust.edu.cn)
