Chinese Optics Letters, Volume. 1, Issue 11, 11668(2003)
Growth and optical characteristics of ZnCdSe/ZnSe QWs on Si substrate with ZnO buffer
In this paper, the growth and characteristics of ZnCdSe/ZnSe quantum wells (QWs) prepared on ZnOSi (111) templates are reported. An oriented ZnO thin film with a smooth surface was employed to be the buffer layer for the ZnCdSe/ZnSe QWs growth. Scanning electron microscopy (SEM) patterns showed that the ZnO buffer layer improved the smoothness of the ZnCdSe/ZnSe sample. Up to the 3rd longitudinal optical phonon of Zn0:56Cd0:44Se observed in Raman spectra suggests that the crystalquality of ZnCdSe/ZnSe QWs is reasonably good. The influence of quantum confinement effect on exciton characters of the QWs was also demonstrated.
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Xiaohua Wang, Xiwu Fan, Chongxin Shan, Jiying Zhang, Zhenzhong Zhang, Youming Lu, Yichun Liu, Zhongyuan Jia, Jingchang Zhong, Dezhen Shen. Growth and optical characteristics of ZnCdSe/ZnSe QWs on Si substrate with ZnO buffer[J]. Chinese Optics Letters, 2003, 1(11): 11668