High Power Laser and Particle Beams, Volume. 32, Issue 7, 073001(2020)

Overview of development of microwave power amplifiers

Jianbing Li1... Pengfei Lin1, Baoliang Hao2 and Jianbang Sun1 |Show fewer author(s)
Author Affiliations
  • 1PLA Strategic Support Force Information Engineering University, Zhengzhou 450001, China
  • 2Beijing Vacuum Electronics Research Institute, Beijing 100015, China
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    Figures & Tables(12)
    Mean time to failure (MTTF) of vacuum power device
    Composition of microwave power module(MPM)
    Current frequency power distribution of MPM
    M1871 MPM
    4~8 GHz 50 W MPM of Beijing Vacuum Electronics Research Institute
    Ku band 500 W double tube pulse MPM
    TH24512 MPM
    Ultra-thin EPC components of Information Engineering University
    Saturated output power vs frequency of current microwave power amplifiers
    • Table 1. Typical millimeter wave products

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      Table 1. Typical millimeter wave products

      serialfrequency/GHzpower/Wduty cycle/%efficiency/%manufacturermain application
      1231~2355~255011L3radar(SAR)
      290.6~91.430050L3seeker,radar
      93~9550CW15CPIradar communication
      W band(bandwidth 5 GHz)1502020CETC12radar communication
      W band(bandwidth 0.5 GHz)20010THALESseeker,radar
      381~86200CW50L3communication
      447~52.4125CW35L3communication
      47~52.4120CW30CETC12communication
      43.5~45.5200CW46L3communication
      534~3610005040L3seeker,radar
      32~377005040CETC12radar
      27.5~31500CW57L3/NEC/CPIcommunication
      27.5~31300CW45CETC12communication
    • Table 2. THz TWT test results

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      Table 2. THz TWT test results

      frequency/THzcathode voltage/kVbeam current/mAsaturated gain/dBpeak power/mW3 dB bandwidth/GHzduty cycle/%
      0.649.74.8222591510
      0.679.63.11771150.5
      0.8511.42.822391511
      1.0312.12.3202950.3
    • Table 3. Main characteristic parameters of several semiconductor materials

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      Table 3. Main characteristic parameters of several semiconductor materials

      materialband gap width/eV electron mobility/ (cm2·V−1·s−1saturated electron velocity/ (107 cm·s−1breakdown field strength/ (MV·cm·−1thermal conductivity/ (W·cm−1·K−1relative permittivity Baliga value (high frequency) Baliga value (low frequency)
      Si1.121 40010.31.511.411
      GaAs1.428 50020.40.513.11116
      4H-SiC3.251 020234.99.773600
      GaN3.451 000(GaN) 2 000(AlGaN/GaN) 2.73.328.91801 450
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    Jianbing Li, Pengfei Lin, Baoliang Hao, Jianbang Sun. Overview of development of microwave power amplifiers[J]. High Power Laser and Particle Beams, 2020, 32(7): 073001

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    Paper Information

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    Received: Apr. 26, 2020

    Accepted: --

    Published Online: Jul. 10, 2020

    The Author Email:

    DOI:10.11884/HPLPB202032.200095

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