The impact of Al2O3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se2 solar cells

Yang LIU; Wei LIU; Meng-xin CHEN; Si-han SHI; Zhi-chao HE; Jin-long GONG; Tuo WANG; Zhi-qiang ZHOU; Fang-fang LIU; Yun SUN; Shu XU

doi:10.1007/s11801-018-8036-7

Optoelectronics Letters, Volume. 14, Issue 5, 363(2018)

The impact of Al₂O₃ back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se₂ solar cells

Yang LIU1... Wei LIU1,*, Meng-xin CHEN2, Si-han SHI1, Zhi-chao HE1, Jin-long GONG2, Tuo WANG2, Zhi-qiang ZHOU1, Fang-fang LIU1, Yun SUN1 and Shu XU3 |Show fewer author(s)

Author Affiliations

¹Tianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China

²Key Laboratory for Green Chemical Technology of Ministry of Education, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China

³Davidson School of Chemical Engineering, Purdue University, West Lafayette IN47907, USA

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LIU Yang, LIU Wei, CHEN Meng-xin, SHI Si-han, HE Zhi-chao, GONG Jin-long, WANG Tuo, ZHOU Zhi-qiang, LIU Fang-fang, SUN Yun, XU Shu. The impact of Al₂O₃ back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se₂ solar cells[J]. Optoelectronics Letters, 2018, 14(5): 363

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Paper Information

Category: Materials

Received: Mar. 12, 2018

Accepted: Mar. 22, 2018

Published Online: Apr. 16, 2019

The Author Email: Wei LIU (wwl@nankai.edu.cn)

DOI:10.1007/s11801-018-8036-7

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

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