Preparation and characterization of In<sub>0.82</sub>Ga<sub>0.18</sub>As PIN photodetectors

Xia LIU; Lian-zhen CAO; Huai-xin LU; Ying-de LI; Hang SONG; Hong JIANG

doi:10.1007/s11801-016-5228-x

Optoelectronics Letters, Volume. 12, Issue 1, 8(2016)

Preparation and characterization of In_0.82Ga_0.18As PIN photodetectors

Xia LIU1...2, Lian-zhen CAO1,2,*, Huai-xin LU1, Ying-de LI1, Hang SONG2 and Hong JIANG2 |Show fewer author(s)

¹Shandong Provincial Key Laboratory of Multi-photon Entanglement and Manipulation, Department of Physics and Optoelectronic Engineering, Weifang University, Weifang 261061, China

²Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

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LIU Xia, CAO Lian-zhen, LU Huai-xin, LI Ying-de, SONG Hang, JIANG Hong. Preparation and characterization of In_0.82Ga_0.18As PIN photodetectors[J]. Optoelectronics Letters, 2016, 12(1): 8

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Paper Information

Received: Nov. 17, 2015

Accepted: --

Published Online: Oct. 12, 2017

The Author Email: Lian-zhen CAO (lianzhencao@wfu.edu.cn)

DOI:10.1007/s11801-016-5228-x

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

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