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Journal of Semiconductors, Volume. 45, Issue 7, 072502(2024)

Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing

Huifan Xiong1,2, Xuesong Lu1,2, Xu Gao1,2, Yuchao Yan1,2, Shuai Liu2, Lihui Song1,2、*, Deren Yang1,2, and Xiaodong Pi1,2、**
Author Affiliations
  • 1State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • 2Key Laboratory of Power Semiconductor Materials and Devices of Zhejiang Province & Institute of Advanced Semiconductors, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311200, China
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    Huifan Xiong, Xuesong Lu, Xu Gao, Yuchao Yan, Shuai Liu, Lihui Song, Deren Yang, Xiaodong Pi. Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing[J]. Journal of Semiconductors, 2024, 45(7): 072502

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    Paper Information

    Category: Articles

    Received: Sep. 14, 2023

    Accepted: --

    Published Online: Jul. 18, 2024

    The Author Email: Song Lihui (LHSong), Pi Xiaodong (XDPi)

    DOI:10.1088/1674-4926/23090024

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology