Acta Photonica Sinica, Volume. 53, Issue 5, 0553116(2024)

InGaN/GaN Quantum Well LED Based on Floating Microdisk Cavity

Gangyi ZHU1,*... Bo NING1, Guoqing QIU1, Chunxiang GUO4, Ying YANG1, Xin LI1, Binghui LI2, Zheng SHI1, Jun DAI3, Feifei QIN1 and Yongjin WANG1 |Show fewer author(s)
Author Affiliations
  • 1College of Telecommunications and Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,China
  • 2Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China
  • 3College of Science,Jiangsu University of Science and Technology,Zhenjiang 212003,China
  • 4Jiangsu Leuven Instruments Co.,Ltd.,Pizhou221300,China
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    Figures & Tables(5)
    Fabrication process of floating InGaN/GaN QW microdisk devices,the finally structures of device I,II and III are shown in the box
    SEM images of InGaN/GaN QW devices
    EL spectra under the different injection currents,inset shows the enlarged spectra under 2 mA and luminous images of three types of devices
    Electrical and spectral detail characteristics of different devices
    The surface current distribution simulation of two types of microdisks
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    Gangyi ZHU, Bo NING, Guoqing QIU, Chunxiang GUO, Ying YANG, Xin LI, Binghui LI, Zheng SHI, Jun DAI, Feifei QIN, Yongjin WANG. InGaN/GaN Quantum Well LED Based on Floating Microdisk Cavity[J]. Acta Photonica Sinica, 2024, 53(5): 0553116

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    Paper Information

    Category: Special Issue for Microcavity Photonics

    Received: Dec. 7, 2023

    Accepted: Apr. 22, 2024

    Published Online: Jun. 20, 2024

    The Author Email:

    DOI:10.3788/gzxb20245305.0553116

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