Acta Photonica Sinica, Volume. 53, Issue 5, 0553116(2024)
InGaN/GaN Quantum Well LED Based on Floating Microdisk Cavity
Fig. 1. Fabrication process of floating InGaN/GaN QW microdisk devices,the finally structures of device I,II and III are shown in the box
Fig. 3. EL spectra under the different injection currents,inset shows the enlarged spectra under 2 mA and luminous images of three types of devices
Fig. 4. Electrical and spectral detail characteristics of different devices
Fig. 5. The surface current distribution simulation of two types of microdisks
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Gangyi ZHU, Bo NING, Guoqing QIU, Chunxiang GUO, Ying YANG, Xin LI, Binghui LI, Zheng SHI, Jun DAI, Feifei QIN, Yongjin WANG. InGaN/GaN Quantum Well LED Based on Floating Microdisk Cavity[J]. Acta Photonica Sinica, 2024, 53(5): 0553116
Category: Special Issue for Microcavity Photonics
Received: Dec. 7, 2023
Accepted: Apr. 22, 2024
Published Online: Jun. 20, 2024
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