Fig. 1. 3D schematic of the proposed TE-pass polarizer on an SOI platform.

Fig. 2. (a) Real part of neff and (b) absolute value of the real part Δneff in the HPW and DW for TM and TE polarizations as a function of waveguide width W. Here, the gap between the metal strip and the Si waveguide below is g=50  nm.

Fig. 3. (a) Mode similarity (between the hybrid plasmonic mode in the HPW and the photonic mode in the DW) and (b) the absolute value of the real part Δneff in the HPW and DW for TM and TE polarizations as a function of insertion layer thickness g. Here, waveguide width W is 450 nm.

Fig. 4. (a) ER and (b) IL as a function of metal strip length d with period variation from 730 to 760 nm. Here, N=8, W=450  nm, and g=50  nm.

Fig. 5. Optical energy flux density along the propagation direction from the top view when the TM or TE mode is injected. Here, W=450  nm, N=8, d=400  nm, and Λ=750  nm.

Fig. 6. SEM image of the fabricated TE-pass polarizer.

Fig. 7. (a) Normalized measured spectrum of one polarizer. (b) Corresponding ER and IL of the device. The black lines are trend lines extracted with robust locally weighted regression.