A fabrication method combining anisotropic wet etching with isotropic wet etching process is proposed to obtain silicon-based three-dimensional curved rotary profile. In the isotropic etching process, the corrosion rate increases exponentially with the concentration of the etching solution in the vicinity of the silicon surface. The little fluctuation of etching solution concentration varies significantly due to the velocity of the etching liquid flow. On this principle, the surface peak and the bottom of octahedral structure obtained by anisotropic etching are polished by the flow difference existing in the condition of the stirring until one smooth three-dimensional surface occurs. By using the anisotropic wet etching to control the depth of the structure and the isotropic wet etching process to polish the curved surface of the structure, a silicon-based three-dimensional curved rotary profile with the height of 100-200 μm is fabricated based on a circle mask pattern with the diameter of 600-1 000 μm. The method proposed is simple, effective and can be used in fabrication of various three-dimensional silicon molds.