Journal of Semiconductors, Volume. 45, Issue 4, 042502(2024)
High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga2O3
Fig. 1. (Color online) A schematic view of SBUVD-based on the HVPE deposited κ(ε)-Ga2O3 layer.
Fig. 2. (Color online) (a) A typical XRD spectrum of the HVPE deposited κ(ε)-Ga2O3 layer on GaN/Al2O3. (b) Transmission spectrum of the HVPE deposited κ(ε)-Ga2O3 layer. Dependence of α2 on photons energy is shown in insertion. (c) SEM cross-sectional image of the κ(ε)-Ga2O3 layer on GaN/Al2O3.
Fig. 3. (Color online) I–V curves of the samples in dark conditions and under radiation exposure.
Fig. 4. (Color online) Spectral dependencies of the PDCR (a), R (b), EQE (c) and D (d) of the MSM structures at U = 1 V.
Fig. 5. (Color online) Dependencies of the PDCR (a), R (b), EQE (c) and D (d) of the MSM structures on U at λ = 254 nm and P = 620 µW/cm2.
Fig. 6. (Color online) Time dependence of the normalized IL at cyclic radiation exposure at λ = 254 nm, P = 620 µW/cm2 and U = 0.
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Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov, Andrei Chikiryaka, Petr Korusenko. High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga2O3[J]. Journal of Semiconductors, 2024, 45(4): 042502
Category: Articles
Received: Oct. 21, 2023
Accepted: --
Published Online: Jun. 21, 2024
The Author Email: Almaev Aleksei (AAlmaev)