Journal of Semiconductors, Volume. 45, Issue 4, 042502(2024)

High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga2O3

Aleksei Almaev1,2、*, Alexander Tsymbalov1, Bogdan Kushnarev1, Vladimir Nikolaev3,4, Alexei Pechnikov4, Mikhail Scheglov4, Andrei Chikiryaka4, and Petr Korusenko5,6
Author Affiliations
  • 1Research and Development Center for Advanced Technologies in Microelectronics, National Research Tomsk State University, Tomsk 634050, Russia
  • 2Fokon LLC, Kaluga 248035, Russia
  • 3Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISIS, Moscow 119049, Russia
  • 4Perfect Crystals LLC, Saint Petersburg 194223, Russia
  • 5Department of Solid-State Electronics, Saint Petersburg State University, Saint Petersburg 199034, Russia
  • 6Department of Physics, Omsk State Technical University, Omsk 644050, Russia
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    Figures & Tables(7)
    (Color online) A schematic view of SBUVD-based on the HVPE deposited κ(ε)-Ga2O3 layer.
    (Color online) (a) A typical XRD spectrum of the HVPE deposited κ(ε)-Ga2O3 layer on GaN/Al2O3. (b) Transmission spectrum of the HVPE deposited κ(ε)-Ga2O3 layer. Dependence of α2 on photons energy is shown in insertion. (c) SEM cross-sectional image of the κ(ε)-Ga2O3 layer on GaN/Al2O3.
    (Color online) I–V curves of the samples in dark conditions and under radiation exposure.
    (Color online) Spectral dependencies of the PDCR (a), R (b), EQE (c) and D (d) of the MSM structures at U = 1 V.
    (Color online) Dependencies of the PDCR (a), R (b), EQE (c) and D (d) of the MSM structures on U at λ = 254 nm and P = 620 µW/cm2.
    (Color online) Time dependence of the normalized IL at cyclic radiation exposure at λ = 254 nm, P = 620 µW/cm2 and U = 0.
    • Table 1. Comparison of the photoelectric properties of self-powered SBUVDs based on diverse Ga2O3 polymorphs.

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      Table 1. Comparison of the photoelectric properties of self-powered SBUVDs based on diverse Ga2O3 polymorphs.

      MaterialsStructureR (mA/W)τr (ms)τd (ms)References
      * The time constants corresponded to fast exponents.
      ε-Ga2O3/GaNHJ43.9120440[55]
      Pt/a-Ga2O3/ITOSBD369027*11*[56]
      Pt/κ(ε)-Ga2O3/PtMSM0.9<100<100This work
      Au/β-Ga2O3 NWsSBD0.011 × 10−36 × 10−2[57]
      NiO/a-Ga2O3HJ0.147200*2510*[58]
      β-Ga2O3/CuGaO2HJ0.025260*140*[59]
      β-Ga2O3/GaNHJ28.4140*70*[60]
      Pt/SnxGa1−xO/PtMSM6.960*180*[61]
      Pt/Au/β-Ga2O3/Au/PtMSM11.6 × 10−31780*2090*[62]
      CuO/β-Ga2O3HJ30.31214[63]
      PEDOT:PSS/β-Ga2O3HJ0.242801410[64]
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    Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov, Andrei Chikiryaka, Petr Korusenko. High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga2O3[J]. Journal of Semiconductors, 2024, 45(4): 042502

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    Paper Information

    Category: Articles

    Received: Oct. 21, 2023

    Accepted: --

    Published Online: Jun. 21, 2024

    The Author Email: Almaev Aleksei (AAlmaev)

    DOI:10.1088/1674-4926/45/4/042502

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