Effects of Intrinsic Point Defects on Response Characteristics of Silicon

Fig. 1. Silicon cell models with intrinsic point defects. (a) Schottky defect; (b) divacancies defect; (c) Frankel defect; (d) tetrahedral interstitial defect; (e) hexagonal interstitial defect; (f) double-interstitial atomic defect

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Fig. 2. Density of states of silicon materials affected by intrinsic point defects. (a) Intrinsic silicon; (b) Schottky defect; (c) divacancies defect; (d) Frankel defect; (e) tetrahedral interstitial defect; (f) hexagonal interstitial defect; (g) double- interstitial atomic defect

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Fig. 3. Absorption of silicon materials under the influence of intrinsic point defects. (a) Vacancy defects; (b) self-interstitial atomic defects

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$Refractive index of silicon materials under the influence of intrinsic point defects. (a) Vacancy defects; (b) self-interstitial atomic defects$

Fig. 4. Refractive index of silicon materials under the influence of intrinsic point defects. (a) Vacancy defects; (b) self-interstitial atomic defects

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Fig. 5. Quantum efficiency of silicon materials affected by intrinsic point defects. (a) Vacancy defects; (b) self-interstitial atomic defects

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Fig. 6. Effects of intrinsic point defects on the response characteristics of silicon materials under the irradiation of 532 nm lasert.(a) Vacancy defects; (b) self-interstitial atomic defects

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Fig. 7. Effects of intrinsic point defects on the response characteristics of silicon materials under the irradiation of 1319 nm laser. (a) Vacancy defects; (b) self-interstitial atomic defects

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Table 1. Absorption αof silicon materials affected by intrinsic point defects

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Table 1. Absorption αof silicon materials affected by intrinsic point defects

Wavelength /nm	α/cm^-1
Wavelength /nm	Intrinsic silicon	Schottky defect	Divacancies defect	Frankel defect	Tetrahedral interstitial defect	Hexagonal interstitial defect	Double- interstitial atomic defect
532	21433	26776	31234	33312	39144	38309	48227
1319	10.998	7619.7	10256	7790.2	50391	4835.6	3607.8

Table 2. Refractive index nof silicon materials affected by intrinsic point defects

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Table 2. Refractive index nof silicon materials affected by intrinsic point defects

Wavelength /nm	Refractive index n
Wavelength /nm	Intrinsic silicon	Schottky defect	Divacancies defect	Frankel defect	Tetrahedral interstitial defect	Hexagonal interstitial defect	Double- interstitial atomic defect
532	5.0411	4.7961	4.6380	4.8168	4.6334	4.9448	5.0052
1319	3.8878	3.9852	4.2240	4.1014	2.8774	4.2642	4.4214

Table 3. Quantum efficiency η of silicon materials affected by intrinsic point defects

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Table 3. Quantum efficiency η of silicon materials affected by intrinsic point defects

Wavelength /nm	Quantum efficiency η
Wavelength /nm	Intrinsic silicon	Schottky defect	Divacancies defect	Frankel defect	Tetrahedral interstitial defect	Hexagonal interstitial defect	Double- interstitial atomic defect
532	0.10543	0.13231	0.15406	0.15857	0.18534	0.17461	0.20712
1319	7.16×10^-5	0.04687	0.06002	0.04705	0.29010	0.02898	0.02128

Table 4. Saturation threshold of silicon-based photosensitive units affected by intrinsic point defects

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Table 4. Saturation threshold of silicon-based photosensitive units affected by intrinsic point defects

Wavelength /nm	Saturation threshold /（W·cm^-2）
Wavelength /nm	Intrinsic silicon	Schottky defect	Divacancies defect	Frankel defect	Tetrahedral interstitial defect	Hexagonal interstitial defect	Double- interstitial atomic defect
532	0.0135	0.0104	0.0088	0.0087	0.0073	0.0081	0.0069
1319	6.8238	0.0106	0.0086	0.0107	0.0015	0.0178	0.0248