Journal of Inorganic Materials, Volume. 38, Issue 10, 1176(2023)

S-type Heterojunction of MOS2/g-C3N4: Construction and Photocatalysis

Rundong MA1...2, Xiong GUO1,2, Kaixuan SHI1,2, Shengli AN1,2, Ruifen WANG1,2,*, and Ruihua GUO12 |Show fewer author(s)
Author Affiliations
  • 11. School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China
  • 22. Laboratory of Green Extraction & Efficient Utilization of Light Rare-Earth Resources, Ministry of Education, Baotou 014010, China
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    Preparation of highly efficient and stable photocatalysts is crucial for the development of photocatalysis technology. In this study, the method of ultrasonic-assisted deposition and low-temperature calcination was used to prepare MoS2/g-C3N4 S-type heterojunction photocatalyst (MGCD). Effects of the phase structure, micro-morphology, optical absorption performance, X-ray photoelectron spectroscopy, electrochemical AC impedance, and photocurrent of the materials on the photocatalytic activity were comprehensively investigated. The results show that, after ultrasonic-assisted deposition-calcination treatment, MoS2 microspheres were broken, dispersed and combined on the surface of g-C3N4 nanosheets, and formed a kind of heterojunction. Under visible light, the degradation rate of 5%MGCD (with 5% MoS2 addition) for Rhodamine B (RhB) reached 99% in 20 min, and still reach 95.2% when the sample was reused for 5 times, showing good photocatalytic performance and stability. Further analysis from the point of view of the formation of built-in electric field shows that the band bending caused by built-in electric field, coupled with MoS2 and g-C3N4 in heterojunction, can effectively guide the directional migration of carriers, which can efficiently promote the separation of photogenerated carriers, thus improving the efficiency of photocatalytic reaction. Free radical capture experiment of heterojunction photocatalyst reveals that O2- and ·OH are the main active species in the catalytic degradation of RhB, followed by H+.

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    Rundong MA, Xiong GUO, Kaixuan SHI, Shengli AN, Ruifen WANG, Ruihua GUO. S-type Heterojunction of MOS2/g-C3N4: Construction and Photocatalysis [J]. Journal of Inorganic Materials, 2023, 38(10): 1176

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    Paper Information

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    Received: Feb. 25, 2023

    Accepted: --

    Published Online: Mar. 6, 2024

    The Author Email: WANG Ruifen (wrf2008@imust.edu.cn)

    DOI:10.15541/jim20230096

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