[2] [2] Bauhuis G J et al. Heavily doped P-type A1GaInP grown by MOCVD [J]. J. CrystalGrowth,1998,191:313

[3] [3] Nishikawa Y et al. Zn doping characteristics for InGaAlP grown by LP-MOCVD [J].Appl. Phys. Lett.,1988,53(21): 2182

[4] [4] Motoda T et al. Multi-wafer growth of highly uniform and high-quality AlGaInP/GaInPstructure using high-speed rotating disk MOGVD [J]. J. Crystal Growth,1994,145:650

[6] [6] Thompson A G et al. The scaling of CVD rotating disk reactors to large sizes andcomparison with theory [J]. J. Electronic Materials,1996,25(9): 1487

[7] [7] Evans G et al. A numerical model of the flow and heat transfer in a rotating diskCVD reactor [J]. J. Heat Tranfer,1987,109:928