Chinese Journal of Quantum Electronics, Volume. 18, Issue 2, 175(2001)

Dynamical Analysis for the Control of In Composition in LP-MOCVD Growth of InGaAlP

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    References(5)

    [2] [2] Bauhuis G J et al. Heavily doped P-type A1GaInP grown by MOCVD [J]. J. CrystalGrowth,1998,191:313

    [3] [3] Nishikawa Y et al. Zn doping characteristics for InGaAlP grown by LP-MOCVD [J].Appl. Phys. Lett.,1988,53(21): 2182

    [4] [4] Motoda T et al. Multi-wafer growth of highly uniform and high-quality AlGaInP/GaInPstructure using high-speed rotating disk MOGVD [J]. J. Crystal Growth,1994,145:650

    [6] [6] Thompson A G et al. The scaling of CVD rotating disk reactors to large sizes andcomparison with theory [J]. J. Electronic Materials,1996,25(9): 1487

    [7] [7] Evans G et al. A numerical model of the flow and heat transfer in a rotating diskCVD reactor [J]. J. Heat Tranfer,1987,109:928

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Dynamical Analysis for the Control of In Composition in LP-MOCVD Growth of InGaAlP[J]. Chinese Journal of Quantum Electronics, 2001, 18(2): 175

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    Received: Mar. 13, 2000

    Accepted: --

    Published Online: May. 15, 2006

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