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Chinese Journal of Quantum Electronics, Volume. 18, Issue 2, 175(2001)

Dynamical Analysis for the Control of In Composition in LP-MOCVD Growth of InGaAlP

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    The dynamicalcharacteristics of the gas flow in Turbo-Disk LP-MOCVD chamber is analysed. The dynamicalpressure model of suppressing In desorption during InGaAlP epitaxial layer grown byLP-MOCVD at high growth temperature around 700 ℃ is presented. The effects of the growth parameters such asthe disk speed and the reaction pressure on In composition in InGaAlP epitaxial layers areexplained based on our model.

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    In compositionInGaAlPLP-MOCVDthe dynamical pressure
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Dynamical Analysis for the Control of In Composition in LP-MOCVD Growth of InGaAlP[J]. Chinese Journal of Quantum Electronics, 2001, 18(2): 175

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    Received: Mar. 13, 2000

    Accepted: --

    Published Online: May. 15, 2006

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology