Chinese Journal of Quantum Electronics, Volume. 35, Issue 6, 747(2018)

Effect of band bending on exciton in a finite-barries quantum well

Jinfeng ZHANG1、* and Teng LI2
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    ZHANG Jinfeng, LI Teng. Effect of band bending on exciton in a finite-barries quantum well[J]. Chinese Journal of Quantum Electronics, 2018, 35(6): 747

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    Paper Information

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    Received: Sep. 21, 2017

    Accepted: --

    Published Online: Dec. 26, 2018

    The Author Email: Jinfeng ZHANG (470671048@qq.com)

    DOI:10.3969/j.issn.1007-5461. 2018.06.016

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