Journal of Inorganic Materials, Volume. 39, Issue 6, 634(2024)
Figures & Tables(19)
![Schematic of typical packaging of power semiconductor device[1]](/Images/icon/loading.gif){kind=icon}
1. Schematic of typical packaging of power semiconductor device[1]
2. Schematic of the liquid phase sintering mechanism for Si3N4 ceramics[10]
3. Effects of volume fraction of glassy phase, grain- boundary film thickness(δ ), and grain size on the thermal conductivity of β -Si3N4[13]
4. Effect of lattice oxygen content on the thermal conductivity of Si3N4 ceramics[17]
5. Displacement-temperature curves of Si3N4 ceramics with MgF2 or MgO as sintering additives[19]
6. XRD patterns of Si3N4 samples prepared with different LiF contents[20]
8. SEM morphologies of the polished surfaces of Si3N4 ceramics after gas pressure sintering (GPS) with different additives added[24]
9. Typical HRTEM images of Si3N4 ceramics added with Y2O3 (a) and Y2Si4N6C (b) as additives[31]
10. Curves of relative displacement of the as-pressed specimens with temperature variation[32]
11. Densification mechanism of Si3N4 ceramics with ZrSi2-MgO additive[36]
14. STEM-EDS characterizations of Si3N4 ceramics with the addition of ZrO2 and ZrH2[47]
15. SEM images on the fracture surfaces of nitrided samples (a, b) and post-sintered samples (c, d) without (a, c) and with (b, d) graphite powder bed addition[57]
17. (a) Shrinkage behaviors and densification mechanism of Si3N4 ceramics during sintering, and (b) relationship between β phase ratio and relative density[62]
18. Evolution of microstructure and diameter of Si3N4 ceramics[10]
Table 1. Properties of ceramic substrate materials[2]
View tableView in ArticleTable 1. Properties of ceramic substrate materials[2]
Material Thermal conductivity/ (W·m-1·K-1) Fracture toughness/ (MPa·m1/2) Bending strength/ MPa Al2O3 18-24 3.5-4.0 300-400 AlN 150-270 3.0-3.5 220-310 ZTA 28 4.5 650 Si3N4 80-177 6.5-7.5 600-800
Tools
Get Citation
Copy Citation Text
Weiming WANG, Weide WANG, Yi SU, Qingsong MA, Dongxu YAO, Yuping ZENG.
Paper Information
Category:
Received: Nov. 14, 2023
Accepted: --
Published Online: Jul. 31, 2024
The Author Email: WANG Weide (nudtwwd@163.com), ZENG Yuping (yuping-zeng@mail.sic.ac.cn)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20