[1] [1] LIANG Chuang, LIANG Bing, LIAO Jing, et al. Performance of a silicon avalanche diode as a single photo detector［J］. Acta Photonica Sinica, 2000, 29(12): 1142-1147.

[2] [2] CAI Zhen-zhu, HU Xiao-long, LIU Li, et al. Performance of Gan-based vertical structure light emitting diodes with hybrid quantum wells［J］. Chinese Journal of Luminescence, 2015, 36(6): 639-644.

[3] [3] WANG Fei. Research progress in focal plane array for real-time laser three dimensional imaging［J］. Chinese Optics, 2013, 6(3):297-305.

[4] [4] HE Wei-ji, SIMA Bo-yu, CHENG Yao-jin, et al. Photon counting imaging based on GM-APD［J］. Optics and Precision Engineering, 2012, 20(8): 1831-1837.

[5] [5] SU Bi-da, WANG Jing-feng, MA Xue-song, et al. Detection performance for laser radars that use geiger-mode APD in atmosphere background［J］. Acta Photonica Sinica, 2015, 44(1): 180-183.

[6] [6] WANG Wei, WANG Chuan, YAN Lin-shu, et al. NP type CMOS APD with high frequency bandwidth［J］. Infrared and Laser Engineering, 2015, 44(2): 699-704.

[7] [7] ZHEN Xiao, PANTIC D, POPOVIC R S, et al. A new single photon avalanche diode in CMOS high-voltage technology［C］. IEEE Solid-state Sensors, Actuators & Microsystems Conference, 2007: 1365-1368.

[8] [8] TUDISCO S, MUSUMECI F, LANZANO L, et al. A new generation of SPAD—single-photon avalanche diodes［J］. IEEE Sensors Journal, 2008, 8(7): 1324-1329.

[9] [9] STOPPA D, MOSCONI D, PANCHERI L, et al. Single-photon avalanche diode CMOS sensor for time-resolved fluorescence measurements［J］. IEEE Sensors Journal, 2009, 9(9): 1084-1090.

[10] [10] BRONZI D, VILLA F, BELLISAI S, et al. Low-noise and large-area CMOS SPADs with timing response free from slow tails［C］. IEEE European Solid-state Device Research Conference, 2012: 230-233.

[11] [11] LIN Qi, MOK K, AMINIAN M, et al. Fabrication of low dark-count PureB single-photon avalanche diodes［C］. IEEE Microelectronics Technology and Devices, 2014: 1-4.

[12] [12] KAMRAN E, LASAGE F, SAWAN M, et al. A low-power photon-counter front-end dedicated to NIRS brain imaging［J］. IEEE Sensors Journal, 2015, 15(7): 3724-3733.

[13] [13] CHOU Fang-ping, WANG Ching-wen, LI Zi-ying, et al. Effect of deep N-well bias in an 850-nm si photodiode fabricated using the CMOS process［J］. IEEE Photonics Technology Letters, 2013, 25(7): 659-662.

[14] [14] ZHANG Bo-wei, LI Zhen-yu, ZAGHLOUL M E, et al. A single-photon avalanche diode in CMOS 0.5μm N-well process［C］. IEEE Sensors, 2012: 1-4.

[15] [15] SAVUKAN V, BROUK I, JAVITT M, et al. An estimation of single photo avalanche diode (SPAD) photon detection efficiency (PDE) nonuniformity［J］. IEEE Sensors Journal, 2013, 13(13): 1637-1640.

[16] [16] FISHBURN M W, MARUYAMA Y, CHARBON E, et al. Reduction of fixed-position noise in position-sensitive single-photon avalanche diodes［J］. IEEE Transactions on Electron Devices, 2011, 58(8): 2354-2361.

[17] [17] GURRIERI F, TISA S, TOSI A, et al. Two-dimensional SPAD imaging camera for photon counting［J］. IEEE Photonics Journal, 2010, 2(5): 759-774.

[18] [18] RICHARDSON J A , WEBSTER E, GRANT L A, et al. Scaleable single-photon avalanche diode structures in nanometer CMOS technology［J］. IEEE Transaction on Electron Devices, 2011, 58(7): 2028-2035.