Acta Photonica Sinica, Volume. 51, Issue 5, 0551312(2022)

An Integrated Device for Electro-optic Modulation and Wavelength Division Multiplexing with the Wavelength Channel Spacing of 3.2 nm

Shuirou WANG1... Heming CHEN2,*, Xue LIU1 and Wanle PAN1 |Show fewer author(s)
Author Affiliations
  • 1College of Electronic and Optical Engineering & College of Flexible Electronics(Future Technology),Nanjing University of Posts and Telecommunications,Nanjing 210023,China
  • 2Bell Honors School,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
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    Figures & Tables(21)
    Working principle of integrated device based on photonic crystal electro-optic modulation and wavelength division multiplexing
    Theoretical model of integrated device based on photonic crystal electro-optic modulation and wavelength division multiplexing
    Three-dimensional structure of integrated devices based on electro-optic modulation and wavelength division multiplexing
    Structural diagram of one-dimensional photonic crystal nanobeam cavity
    Structural diagram of side-coupling between one-dimensional photonic crystal nanobeam cavity and nanowire waveguide
    The influence of Nr on transmittance and resonance wavelength
    The influence of ΔR on transmittance and resonance wavelength
    Electro-optic modulator structure diagram
    Schematic diagram of electro-optic modulator doping structure
    Carrier density distribution diagram when the voltage across both ends is 1.25 V
    Modulation reflectance spectra "on" and "off" states
    Structure diagram of wavelength division multiplexing module
    Transmission spectrum of each port of wavelength division multiplexing module
    Steady-state field distribution diagram of wavelength division multiplexing
    Overall integrated device structure diagram
    Steady-state field distribution diagram of integrated devices
    Transmission spectrum of integrated device when the modulation state is "on" and "off"
    Simulation calculation of the stable time in the "on" and "off" states
    The influence of variation of center holes radius on insertion loss
    • Table 1. Performance parameters of integrated devices

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      Table 1. Performance parameters of integrated devices

      λ/nmγIL/dBηER/dBDCCT/dBV/GHz
      Port APort B
      1 550.40.8917.130.98--24.20-
      1 553.60.4022.520.99-23.37-12.50
    • Table 2. Comparison with state-of-the-art integrated device for electro-optic modulation and wavelength-division multiplexing

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      Table 2. Comparison with state-of-the-art integrated device for electro-optic modulation and wavelength-division multiplexing

      ReferenceChannel spacing /nmηER/dBVpp/VCCT/dBFootprint/μm
      17->31.75<-202 000×700
      186.75-1.82-5 200×2 700
      1920>201.505<-2717.83×17.3
      Our device3.2>171.25<-237.8×71.34
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    Shuirou WANG, Heming CHEN, Xue LIU, Wanle PAN. An Integrated Device for Electro-optic Modulation and Wavelength Division Multiplexing with the Wavelength Channel Spacing of 3.2 nm[J]. Acta Photonica Sinica, 2022, 51(5): 0551312

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    Paper Information

    Category: Special Issue for Micro/Nanophotonics

    Received: Jan. 14, 2022

    Accepted: Mar. 22, 2022

    Published Online: Jun. 28, 2022

    The Author Email: CHEN Heming (chhm@njupt.edu.cn)

    DOI:10.3788/gzxb20225105.0551312

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