Researching | Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy

Journal of Semiconductors, Volume. 45, Issue 1, 012503(2024)

Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy

Jun Fang^1,2, Fan Zhang², Wenxian Yang^2、*, Aiqin Tian², Jianping Liu², Shulong Lu², and Hui Yang^2、**

Author Affiliations

¹School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

²Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

show less

Full Text Get PDF

Figures&Tables (9)

References (30)

Paper Information

References(30)

[1] T Takeuchi, G Hasnain, S Corzine et al. GaN-based light emitting diodes with tunnel junctions. Jpn J Appl Phys, 40, L861(2001).

[2] I Ozden, E Makarona, A V Nurmikko et al. A dual-wavelength indium gallium nitride quantum well light emitting diode. Appl Phys Lett, 79, 2532(2001).

[3] Y K Song, H Zhou, M Diagne et al. A vertical cavity light emitting InGaN quantum well heterostructure. Appl Phys Lett, 74, 3441(1999).

[4] S R Jeon, C S Oh, J W Yang et al. GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode. Appl Phys Lett, 80, 1933(2002).

[5] M Diagne, Y He, H Zhou et al. Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction. Appl Phys Lett, 79, 3720(2001).

[6] S Krishnamoorthy, F Akyol, S Rajan. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes. Appl Phys Lett, 105, 141104(2014).

[7] S Krishnamoorthy, D N Nath, F Akyol et al. Polarization-engineered GaN/InGaN/GaN tunnel diodes. Appl Phys Lett, 97, 203502(2010).

[8] Z H Zhang, S Tiam Tan, Z Kyaw et al. InGaN/GaN light-emitting diode with a polarization tunnel junction. Appl Phys Lett, 102, 193508(2013).

[9] E C Young, B P Yonkee, F Wu et al. Hybrid tunnel junction contacts to III–nitride light-emitting diodes. Appl Phys Express, 9, 022102(2016).

[10] M Kaga, T Morita, Y Kuwano et al. GaInN-based tunnel junctions in n–p–n light emitting diodes. Jpn J Appl Phys, 52, 08JH06(2013).

[11] J Yang, D G Zhao, Z S Liu et al. A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode. J Semicond, 43, 010501(2022).

[12] S Heikman, S Keller, Y Wu et al. Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures. J Appl Phys, 93, 10114(2003).

[13] M L Zhang, M Ikeda, S Y Huang et al. Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p+-GaN contacting layers. J Semicond, 43, 092803(2022).

[14] W J Li, S Sharmin, H Ilatikhameneh et al. Polarization-engineered III-nitride heterojunction tunnel field-effect transistors. IEEE J Explor Solid State Comput Devices Circuits, 1, 28(2015).

[15] S Krishnamoorthy, P S Park, S Rajan. Demonstration of forward inter-band tunneling in GaN by polarization engineering. Appl Phys Lett, 99, 233504(2011).

[16] J Simon, Z Zhang, K Goodman et al. Polarization-induced zener tunnel junctions in wide-band-gap heterostructures. Phys Rev Lett, 103, 026801(2009).

[17] X D Yan, W J Li, S M Islam et al. Polarization-induced zener tunnel diodes in GaN/InGaN/GaN heterojunctions. Appl Phys Lett, 107, 163504(2015).

[18] Y Kuwano, M Kaga, T Morita et al. Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions. Jpn J Appl Phys, 52, 08JK12(2013).

[19] F Akyol, Y W Zhang, S Krishnamoorthy et al. Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content. Appl Phys Express, 10, 121003(2017).

[20] D Takasuka, Y Akatsuka, M Ino et al. GaInN-based tunnel junctions with graded layers. Appl Phys Express, 9, 081005(2016).

[21] J I Pankove, C W Magee, R O Wance. Hole-mediated chemisorption of atomic hydrogen in silicon. Appl Phys Lett, 47, 748(1985).

[22] J Neugebauer, C G Van de Walle. Role of hydrogen in doping of GaN. Appl Phys Lett, 68, 1829(1996).

[23] L R Jiang, J P Liu, A Q Tian et al. GaN-based green laser diodes. J Semicond, 37, 111001(2016).

[24] F Liang, D G Zhao, Z S Liu et al. GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature. J Semicond, 42, 112801(2021).

[25] M Pristovsek, A Kadir, C Meissner et al. Growth mode transition and relaxation of thin InGaN layers on GaN (0001). J Cryst Growth, 372, 65(2013).

[26] S Suihkonen, O Svensk, T Lang et al. The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency. J Cryst Growth, 298, 740(2007).

[27] F C P Massabuau, L Trinh-Xuan, D Lodié et al. Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells. J Appl Phys, 113, 073505(2013).

[28] S Krishnamoorthy, F Akyol, P S Park et al. Low resistance GaN/InGaN/GaN tunnel junctions. Appl Phys Lett, 102, 113503(2013).

[29] S W Hamdy, E C Young, A I Alhassan et al. Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes. Opt Express, 27, 8327(2019).

[30] Y Akatsuka, S Iwayama, T Takeuchi et al. Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy. Appl Phys Express, 12, 025502(2019).

Tools

Get Citation

Copy Citation Text

Jun Fang, Fan Zhang, Wenxian Yang, Aiqin Tian, Jianping Liu, Shulong Lu, Hui Yang. Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy[J]. Journal of Semiconductors, 2024, 45(1): 012503

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Articles

Received: Jun. 20, 2023

Accepted: --

Published Online: Mar. 13, 2024

The Author Email: Yang Wenxian (WXYang), Yang Hui (HYang)

DOI:10.1088/1674-4926/45/1/012503

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology