Light-emitting devices based on atomically thin MoSe<sub>2</sub>

Xinyu Zhang; Xuewen Zhang; Hanwei Hu; Vanessa Li Zhang; Weidong Xiao; Guangchao Shi; Jingyuan Qiao; Nan Huang; Ting Yu; Jingzhi Shang

doi:10.1088/1674-4926/45/4/041701

Journal of Semiconductors, Volume. 45, Issue 4, 041701(2024)

Light-emitting devices based on atomically thin MoSe₂

Xinyu Zhang¹, Xuewen Zhang¹, Hanwei Hu¹, Vanessa Li Zhang², Weidong Xiao¹, Guangchao Shi¹, Jingyuan Qiao¹, Nan Huang¹, Ting Yu^2,3、*, and Jingzhi Shang^1、**

Author Affiliations

¹Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710129, China

²School of Physics and Technology, Wuhan University, Wuhan 430072, China

³Wuhan Institute of Quantum Technology, Wuhan 430206, China

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Xinyu Zhang, Xuewen Zhang, Hanwei Hu, Vanessa Li Zhang, Weidong Xiao, Guangchao Shi, Jingyuan Qiao, Nan Huang, Ting Yu, Jingzhi Shang. Light-emitting devices based on atomically thin MoSe₂[J]. Journal of Semiconductors, 2024, 45(4): 041701

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Paper Information

Category: Articles

Received: Aug. 12, 2023

Accepted: --

Published Online: Jun. 21, 2024

The Author Email: Yu Ting (TYu), Shang Jingzhi (JZShang)

DOI:10.1088/1674-4926/45/4/041701

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