Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells

Min Zhi; Xuan Fang; Shouzhu Niu; Dan Fang; Jilong Tang; Dengkui Wang; Xinwei Wang; Xiaohua Wang; Zhipeng Wei

doi:10.3788/LOP55.051603

Laser & Optoelectronics Progress, Volume. 55, Issue 5, 051603(2018)

Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells

Min Zhi, Xuan Fang^*;, Shouzhu Niu, Dan Fang, Jilong Tang, Dengkui Wang, Xinwei Wang, Xiaohua Wang, and Zhipeng Wei

State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China

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Min Zhi, Xuan Fang, Shouzhu Niu, Dan Fang, Jilong Tang, Dengkui Wang, Xinwei Wang, Xiaohua Wang, Zhipeng Wei. Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells[J]. Laser & Optoelectronics Progress, 2018, 55(5): 051603

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Paper Information

Category: Materials

Received: Dec. 12, 2017

Accepted: --

Published Online: Sep. 11, 2018

The Author Email: Fang Xuan ( fangxuan110@126.com)

DOI:10.3788/LOP55.051603

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology