Laser & Optoelectronics Progress, Volume. 55, Issue 5, 051603(2018)
Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells
The influence of rapid thermal annealing (RTA) on the structural and luminescence properties of GaAs/AlGaAs quantum wells is investigated. The results show that, when the annealing temperature is 800 ℃, the crystal quality and photoluminescence (PL) intensity is significantly improved. When the annealing temperature is 900 ℃, the crystal quality and PL intensity decrease. According to the peak energy theory, the luminous mechanism at room temperature of PL peaks is obtained. A whole RTA-induced blue shift of PL peaks is observed by peak-differentiating and fitting. The PL mapping demonstrates that RTA can significantly improve the whole crystal quality and the luminous uniformity of materials.
Get Citation
Copy Citation Text
Min Zhi, Xuan Fang, Shouzhu Niu, Dan Fang, Jilong Tang, Dengkui Wang, Xinwei Wang, Xiaohua Wang, Zhipeng Wei. Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells[J]. Laser & Optoelectronics Progress, 2018, 55(5): 051603
Category: Materials
Received: Dec. 12, 2017
Accepted: --
Published Online: Sep. 11, 2018
The Author Email: Fang Xuan ( fangxuan110@126.com)