Infrared and Laser Engineering, Volume. 37, Issue 1, 1(2008)
Development of Ⅲ-Ⅴ semiconductor FPA photodetectors of full optical spectrum
[1] [1] GUNAPALA S D,BANDARA S V,LIU J K.640×512 pixel narrow -band,four -band,and broad -band quantum well infrared photodetector focal plane arrays[J].Infrared Physics and Technology.2003,44(5-6):411-425.
[2] [2] JIANG J,MI K,TlsAO S,et al.Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors[J].Appl Phys Lett,2004,84(13):2232-2234.
[3] [3] KRISHNA S.Quantum dots-in-a-well infrared photodetectors[J].Infrared Physics & Technology,2005,47,153-163.
[4] [4] Sanjay Krishna,Darren Forman,Senthil Annamalai,et al.emonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors[J].Applied Physics Letters,2005,86:193501
[5] [5] TANG Shiang-Feng,et al.High-temperature operation normal Incident 256×256 InAs-GaAs quantum-dot infrared photodetector focal plane array[J].IEEE Photonics Technology Letters,2006,18(8):986.
[6] [6] GUNAPALA S D,BANDARA S V,HILL C J,et al.Demonstration of 640×512 pixels long-wavelength infrared(LWIR)quantum dot infrared photodetector(QDIP)imaging focal plane array[J].Infrared Physics & Technology,2007,50:149-155.
[7] [7] ARIYAWANSAA G,PERERA A G U,X.H.Su,et al.Multicolor tunneling quantum dot infrared photodetectors operating at room temperature[J].Infrared Physics & Technology,2007,50:156-161.
[8] [8] WEST L C,EGLASH S J.First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well[J].Appl Phys Lett,1985,46(12):1156-1158.
[9] [9] LEVINE B F.High-detectivity D*=1×1010 cmHz 1/2W-1,GaAs/AlGaAs multiquantum well 8.3 μm infrared detector[J].Applied Physics Letters,1988,53(4):296-298.
[10] [10] BREITER R,CABANSKI W A,KOCH R,et al.Highresolution QWIP and MCT FPA modules at AIM[C]//Proceedings of SPIE,Infrared Technology and Applications XXV,1999,3698:397-406.
[11] [11] SCHNEIDER H,FLEISSNER J,REHM R,et al.Characterization of QWLP(10-16μm)broad band FPA[C].Proceedings of SPIE,2003,4820:273-281.
[12] [12] BANDARA S V,GUNAPALA S D,LIU J K,et al.Fourband qnantum well infrared photodetector array[J].Infrared Physics & Technology.2003,44:369-375.
[13] [13] J M,C K,G A,et al.Development of a 1 k×1 k GaAs QWIP far IR imaging array[C]//Proceedings of SPIE,Focal Plane Arrays for Space Telescopes,2004,5167:175-178.
[14] [14] JHABVALA M,CHOI K K,et al.Development of a 1 k×1 k,8~12 μm QWIP array[J].Infrared Physics & Technology,2007,50:234-239.
[21] [21] REINE M B,HAIRSTON A,LAMARRE P,et al.Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays[C]//Proceedings of SPIE,Gallium Nitride Materials and Devices,2006,6121:256-250
[23] [23] LIM B W,GANGOPADHYAY S,YANG J W 8×8 GaN Schottky barrier photodiode array for visible-blind imaging[J].Electronics Letters,1997,33(7):633.
[24] [24] HUANG Z C,MOTT D B,SHU P.K.256×256 GaN Ultraviolet Imaging Array[C]//American Institute of Physics,Space Technology and Applications International Forum,1998.
[25] [25] YA-NG W,NOHOVA T,KRISHNANKUTTY S,et al.Back-Illuminated GaN/AlGaN Heterojunction Photodiodes with High Quantum Efficiency and Low Noise[J].Appl Phys Lett,1998,73:1086.
[26] [26] BROWN J D,YU Z H,et al.Visible-blind UV digital camera based on a 32×32 array of GaN/AIGaN P-i-n photodiodes[J].MRS Intemet J Nitride Semicond Res,1999,4(9):1-5.
[27] [27] BROWN J D,BONEY J,et al.UV-specific(320-365 nm)digital camera based on 128×128 focal plane array of GaN/AIGaN p-i-n photodiodes[J].MRS Intemet J Nitride Semi.cond Res,2000,5(6):1-4.
[28] [28] LONG J P,VARADARAAJAN S,MATTHEWS J,et al.UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes[J].Opto-Electron Rev,2002,10(4):251-260.
[29] [29] MCCLINTOCK R,et al.320×256 solar -blind focal plane arrays based on AlGaN[J].Appl Phys Lett,2005,86(1):011117.
[30] [30] REINE M B,HAIRSTON A,LAMARRE P,et al.Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays[C]//Proceedings of SPIE,Semiconductor Photodetectors Ⅲ,2006,6119:1-15.
[31] [31] OZER S,CELLEK O,BESIKCI C.Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array[J].Infrared Physics&Technology,2005,(47):115-118.
[32] [32] LUO H,GUPTA J A,LIU H C.1.55μm GaNAsSb photodetector on GaAs[J].Appl Phys Lett,2005,86:211121.
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[in Chinese]. Development of Ⅲ-Ⅴ semiconductor FPA photodetectors of full optical spectrum[J]. Infrared and Laser Engineering, 2008, 37(1): 1