Chinese Journal of Quantum Electronics, Volume. 19, Issue 2, 166(2002)

Studies on Gain Characteristics of Erbium-doped Optical Waveduide Amplifiers

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    References(9)

    [1] [1] Nvkolak G et al.Systems evaluation of an Er3+-doped planar waveguide amplifier [J].IEEE Photonics Technol.Lett.,1993,5(10): 1185~1187

    [2] [2] Shooshtari A et al.Yb3+ sensitized Er3+-doped waveguide amplifiers: a theoretical approach [C].SPIE..1998,3278:149~165

    [3] [3] Choi Y B,Cho S H.Er-Al codoped silicate planar light waveguide-type amplifier fabricated by radio-frequency sputtering [J].Optics.Lett.,2000,25(4): 263~265

    [4] [4] Fabrizio Di Pasquale,Maurizio Zoboli.Analysis of erbium-doped waveguide amplifiers by a full-vectorial finiteelement method [J].IEEE J.Lightwave Technol,1993,11(10): 1565~1573

    [5] [5] Federico Caccavale et al.A numerical study of erbium doped active LiNbO3 waveguides by the beam propagation method [J].IEEE J.Lightwave Technol,1997,15(12): 2294~2299

    [6] [6] Vermelho M V D et al.Simple and accurate procedure for modeling erbium-doped waveguide amplifiers with high concentration [J].IEEE J.Lightwave Technol,2000,18(3): 401~407

    [7] [7] Giles C R,Desurvire E.Modeling erbium-doped fiber amplifiers [J].J.Lightwave Technol,1991,9(3): 271~283

    [8] [8] Rebolledo M A.Jarabo S.Erbium-doped silica fiber modeling with overlapping factors [J].Appl.Opt.,1994,33(18):5585~5593

    [9] [9] Snoeks E.Kik P G,Polman A.Concentration quenching in erbium-implanted alkali-silica glasses [J].Opt.Mater.,1996.5(1): 159~167

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Studies on Gain Characteristics of Erbium-doped Optical Waveduide Amplifiers[J]. Chinese Journal of Quantum Electronics, 2002, 19(2): 166

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    Paper Information

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    Received: Jan. 9, 2001

    Accepted: --

    Published Online: May. 15, 2006

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