Acta Photonica Sinica, Volume. 34, Issue 6, 909(2005)

The Study of the Growth of GaInP2 Materials on Ge Substrate

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    References(4)

    [2] [2] Yoshino J, Iwamoto T,Kwkimoto H,et al. The study of GaInP on GaAs sustrate. J Appl Phys,1981,20(4):290~292

    [3] [3] Friedman D,Olson.J M.Analysis of Ge junctions for GaInP/GaAs/Ge three-junction solar cells.Progress in Photovoltaics: Research and Applications, 2001,9(3):179~189

    [4] [4] Ting S M, Fitzgerald E A,Sieg R M,et al.Range of Defect Morphologies on GaAs Grown on Offcut (001) Ge Substrates. Journal of Electronic Materials,1998, 27(5):451~461

    [5] [5] Modak P,Dhont M,Mijlemans D,et al.(Al)GaInP Multiquantum Well LEDS on GaAs and Ge. Journal of Electronic Materials, 2000,29(4):80~84

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Study of the Growth of GaInP2 Materials on Ge Substrate[J]. Acta Photonica Sinica, 2005, 34(6): 909

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    Received: May. 19, 2004

    Accepted: --

    Published Online: Jun. 12, 2006

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