GaInP_2 materials had been obtained on Ge substrate (100) toward (110)miscut 9 degree by a home-made low pressure MOCVD system.Its growth condition was investigated,and the testing results show that growth temperature, Ⅴ/Ⅲ ratio and growth speed influence on surface morphology and solid composition of GaInP_2.The measurements indicate that growth temperature should be 650～680℃, Ⅴ/Ⅲ ratio should be 180～220, growth speed 25～35 nm/min. And the results shows that the nearly similar performance of GaInP_2 is obtained on both GaAs and Ge substrate.