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Acta Optica Sinica, Volume. 42, Issue 23, 2314003(2022)

Chaos Synchronization of Distributed Bragg Reflection Semiconductor Lasers Driven by Common Noise

Yicheng Du1,2, Rong Zhang1,2, Longsheng Wang1,2, Zhiwei Jia1,2, and Anbang Wang1,2、*
Author Affiliations
  • 1Key Laboratory of Advanced Transducers and Intelligent Control System, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, Shanxi , China
  • 2College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, Shanxi , China
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    AbstractGet PDF(in Chinese)
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    References (25)
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    Figures & Tables(9)
    Device diagram of common noise-driven chaotic synchronization of DBR lasers

    Fig. 1. Device diagram of common noise-driven chaotic synchronization of DBR lasers

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    Optical spectra of DBR semiconductor laser (Ig=60 mA, Ip=0 mA,ID=20 mA,λd=1552.44 nm,Δλd=0.24 nm,and kj=0.43). (a) Without noise injection; (b) with noise injection

    Fig. 2. Optical spectra of DBR semiconductor laser (Ig=60 mA, Ip=0 mA,ID=20 mA,λd=1552.44 nm,Δλd=0.24 nm,and kj=0.43). (a) Without noise injection; (b) with noise injection

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    Common noise-driven chaos synchronization of DBR lasers. (a) Time series; (b) RF spectra; (c) correlation dot plot of intensity waveforms of SLA and SLB; (d) correlation dot plot of driving signal and intensity waveform of SLA

    Fig. 3. Common noise-driven chaos synchronization of DBR lasers. (a) Time series; (b) RF spectra; (c) correlation dot plot of intensity waveforms of SLA and SLB; (d) correlation dot plot of driving signal and intensity waveform of SLA

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    Influence of injection strength kj on synchronization between response lasers (CAB) and driving-response correlation (CAD)

    Fig. 4. Influence of injection strength kj on synchronization between response lasers (CAB) and driving-response correlation (CAD)

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    Correlation dimension calculation results of DBR laser intensity waveform (N=1300, τ=1, M=50, m=2, τ΄=1, and M΄ is 22-27). (a) kj=0.34; (b) kj=0.53；(c) kj=0.83; (d) kj=1.32

    Fig. 5. Correlation dimension calculation results of DBR laser intensity waveform (N=1300, τ=1, M=50, m=2, τ΄=1, and M΄ is 22-27). (a) kj=0.34; (b) kj=0.53；(c) kj=0.83; (d) kj=1.32

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    Influence of grating region current detuning and wavelength mismatch on chaos synchronization of DBR Lasers. (a) Mismatch of current in grating region; (b) wavelength mismatch

    Fig. 6. Influence of grating region current detuning and wavelength mismatch on chaos synchronization of DBR Lasers. (a) Mismatch of current in grating region; (b) wavelength mismatch

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    Influence of parameter mismatch on chaos synchronization. (a) Injection strength; (b) gain region current; (c) length of grating region (Lgrating); (d) length of phase region (Lphase)

    Fig. 7. Influence of parameter mismatch on chaos synchronization. (a) Injection strength; (b) gain region current; (c) length of grating region (Lgrating); (d) length of phase region (Lphase)

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    Analysis of chaos synchronization recovery time. (a) Synchronization recovery time of DBR laser wavelength keying;(b) variation of center wavelength of DBR laser

    Fig. 8. Analysis of chaos synchronization recovery time. (a) Synchronization recovery time of DBR laser wavelength keying;(b) variation of center wavelength of DBR laser

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    • Table 1. Some internal parameters of DBR semiconductor laser

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      Table 1. Some internal parameters of DBR semiconductor laser

      SymbolDescriptionValue
      αLinewidth factor3
      rInterface reflection coefficient0.32
      LgainActive region length700 μm
      LphasePhase region length100 μm
      LgratingGrating region length500 μm
      WActive region width2.50 μm
      TActive region thickness40 nm
      GnNonlinear gain coefficient1×10-23 m3
      DcInitial carrier density1×1024 m-3
      GlGain coefficient linear3×10-20 m2
      DctCarrier density transparency1.5×1024 m-3
      fStopGrating stopband frequency-400 GHz
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    Yicheng Du, Rong Zhang, Longsheng Wang, Zhiwei Jia, Anbang Wang. Chaos Synchronization of Distributed Bragg Reflection Semiconductor Lasers Driven by Common Noise[J]. Acta Optica Sinica, 2022, 42(23): 2314003

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    Paper Information

    Category: Lasers and Laser Optics

    Received: May. 9, 2022

    Accepted: Jun. 13, 2022

    Published Online: Dec. 14, 2022

    The Author Email: Wang Anbang (wanganbang@tyut.edu.cn)

    DOI:10.3788/AOS202242.2314003

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology