Chinese Physics B, Volume. 29, Issue 8, (2020)

Optical absorption in asymmetrical Gaussian potential quantum dot under the application of an electric field

Xue-Chao Li, Chun-Bao Ye, Juan Gao, and Bing Wang
Author Affiliations
  • Optoelectronics Physics, Anhui University of Science and Technology, Huainan 232001, China
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    Figures & Tables(6)
    The third-order nonlinear, linear, as well as total OAC based on incident photon energy at the parameters of R = 10.0 nm, L = 10.0 nm, V0 = 100 meV, F = 100 kV/cm, I = 5.0 MW/cm2.
    The total OAC based on the incident photon energy at R = 10.0 nm, L = 10.0 nm, V0 = 100 meV, I = 5.0 MW/cm2 and four different values of F.
    The total OAC based on the incident photon energy at R = 10.0 nm, V0 = 100 meV, F = 100 kV/cm, I = 5.0 MW/cm2 and four different values of L.
    The total OAC based on the incident photon energy at L = 10.0 nm, V0 = 100 meV, F = 100 kV/cm, I = 5.0 MW/cm2 and three different values of R.
    The total OAC based on the incident photon energy at R = 10.0 nm, L = 10.0 nm, F = 100 kV/cm, I = 5.0 MW/cm2 and three distinct values of V0.
    The total OAC based on the incident photon energy at R = 10.0 nm, L = 10.0 nm, V0 = 100 meV, F = 100 kV/cm and three distinct values of I.
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    Xue-Chao Li, Chun-Bao Ye, Juan Gao, Bing Wang. Optical absorption in asymmetrical Gaussian potential quantum dot under the application of an electric field[J]. Chinese Physics B, 2020, 29(8):

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    Paper Information

    Received: Feb. 23, 2020

    Accepted: --

    Published Online: Apr. 29, 2021

    The Author Email: Ye Chun-Bao (cbyeaust@163.com)

    DOI:10.1088/1674-1056/ab9284

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