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Optoelectronics Letters, Volume. 8, Issue 3, 229(2012)

Design of GaAs/AlxGa1-xAs asymmetric quantum wells for THz-wave by difference frequency generation

Xiao-long CAO1...2,*, Jian-quan YAO1,2, Neng-nian ZHU1,2, and De-gang XU12 |Show fewer author(s)
Author Affiliations
  • 1Institute of Laser and Optoelectronics, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
  • 2Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072,China
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    CAO Xiao-long, YAO Jian-quan, ZHU Neng-nian, XU De-gang. Design of GaAs/AlxGa1-xAs asymmetric quantum wells for THz-wave by difference frequency generation[J]. Optoelectronics Letters, 2012, 8(3): 229

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    Paper Information

    Received: Nov. 1, 2011

    Accepted: --

    Published Online: Jul. 12, 2017

    The Author Email: Xiao-long CAO (caoxiaolong63@126.com)

    DOI:10.1007/s11801-012-1156-6

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology