Journal of Infrared and Millimeter Waves, Volume. 40, Issue 5, 680(2021)
Effective enhancement of the photoluminescence from the Si+/Ni+ ions co-implanted SOI by directly constructing the nanodisk photonic crystals
Fig. 1. Preparation process of Au film photonic crystal array.
Fig. 2. (a)Simulation of electric field strength of Au film without photonic crystal structure(b)Simulation of electric field strength of Au film with photonic crystal structure(c)SEM characterization of Au film photonic crystal structure sample.
Fig. 3. PL spectra and Puercell factor of Si + / Ni + ion co-implanted SOI nanodisk Au film sample and the uncovered sample as well as the simulated sample.
Fig. 4. The photonic band gap of the sample with the Au nanodisk-array photonic crystals which simulated by the FDTD software. The 3.6×1014-3.7×1014 Hz(810~830 nm)range corresponding to the solid black line is the photonic forbidden band,and the black dotted line corresponds to the luminous peak at 3.5×1014 Hz(857nm).
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Hao-Chen TONG, Shu-Min TANG, Shu-Ming YE, Xiao-xiao Duan, Xiao-Nan LI, Ji-Yang XIE, Lu-Ran ZHANG, Jie YANG, Feng QIU, Rong-Fei WANG, Xiao-Ming WEN, Yu Yang, Hao-Yang CUI, Chong WANG. Effective enhancement of the photoluminescence from the Si+/Ni+ ions co-implanted SOI by directly constructing the nanodisk photonic crystals[J]. Journal of Infrared and Millimeter Waves, 2021, 40(5): 680
Category: Research Articles
Received: Dec. 29, 2020
Accepted: --
Published Online: Sep. 29, 2021
The Author Email: WANG Rong-Fei (rfwang@ ynu.edu.cn), WANG Chong (cwang@ynu.edu.cn)