Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights

Guang Yang; Lingbo Xu; Can Cui; Xiaodong Pi; Deren Yang; Rong Wang

doi:10.1088/1674-4926/45/1/012502

Journal of Semiconductors, Volume. 45, Issue 1, 012502(2024)

Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights

Guang Yang^1,3, Lingbo Xu^1,3, Can Cui^1、*, Xiaodong Pi^2,3、**, Deren Yang^2,3, and Rong Wang^2,3、***

¹Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China

²State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

³Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou 311200, China

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Guang Yang, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang. Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights[J]. Journal of Semiconductors, 2024, 45(1): 012502

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Paper Information

Category: Articles

Received: Jun. 21, 2023

Accepted: --

Published Online: Mar. 13, 2024

The Author Email: Cui Can (CCui), Pi Xiaodong (XDPi), Wang Rong (RWang)

DOI:10.1088/1674-4926/45/1/012502

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laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology