Chinese Journal of Quantum Electronics, Volume. 22, Issue 2, 238(2005)
Study on Zn composition distributions in Cd1-xZnxTe wafers grown in the Shenzhou 3 by micro-photoluminescence
References(3)
[1] [1] Maxey C D, Gower J E, Capper P, et al. Zn concentration determination in CdZnTe by NIR spectroscopy [J].Journal of Crystal Growth, 1999, 197: 427-434.
[3] [3] Li Z F, Lu W, Huang G S, et al. Microphotoluminescence mapping on CdZnTe: Zn distribution [J]. J. of Appl.Phys., 2001, 90(1): 260-264.
[4] [4] Olego D J, Faurie J P, Sivananthan S, et al. Optoelectronic properties of Cdi_xZnxTe films grown by molecular beam epitaxy on GaAs substrates [J]. Appl. Phys. Lett., 1985, 47(11): 1172-1174.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on Zn composition distributions in Cd1-xZnxTe wafers grown in the Shenzhou 3 by micro-photoluminescence[J]. Chinese Journal of Quantum Electronics, 2005, 22(2): 238
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